Infineon OptiMOS Type P-Channel MOSFET, 14.9 A, -30 V Enhancement, 8-Pin PG-DSO-8 BSO301SPHXUMA1
- N° de stock RS:
- 273-5243
- Référence fabricant:
- BSO301SPHXUMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 2500 unités)*
2 217,50 €
(TVA exclue)
2 682,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 12 mars 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 2500 + | 0,887 € | 2 217,50 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 273-5243
- Référence fabricant:
- BSO301SPHXUMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 14.9A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Package Type | PG-DSO-8 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 136nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC, RoHS, IEC61249-2-21 | |
| Height | 1.5mm | |
| Width | 40 mm | |
| Length | 40mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 14.9A | ||
Maximum Drain Source Voltage Vds -30V | ||
Package Type PG-DSO-8 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 136nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC, RoHS, IEC61249-2-21 | ||
Height 1.5mm | ||
Width 40 mm | ||
Length 40mm | ||
Automotive Standard No | ||
The Infineon MOSFET is a P channel power MOSFET. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on state resistance and figure of merit characteristics. It has 150 degree Celsius operating temperature and qualified according JEDEC for target applications.
Logic level
Halogen free
RoHS compliant
Avalanche rated
Pb free lead plating
Enhancement mode
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