Infineon ISA Type N, Type P-Channel MOSFET, 7.9 A, 40 V Enhancement, 8-Pin PG-DSO-8 ISA250300C04LMDSXTMA1
- N° de stock RS:
- 348-907
- Référence fabricant:
- ISA250300C04LMDSXTMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 20 unités)*
9,28 €
(TVA exclue)
11,22 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 4 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 20 - 180 | 0,464 € | 9,28 € |
| 200 - 480 | 0,441 € | 8,82 € |
| 500 - 980 | 0,408 € | 8,16 € |
| 1000 - 1980 | 0,376 € | 7,52 € |
| 2000 + | 0,362 € | 7,24 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 348-907
- Référence fabricant:
- ISA250300C04LMDSXTMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N, Type P | |
| Maximum Continuous Drain Current Id | 7.9A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | ISA | |
| Package Type | PG-DSO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 35mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 8.1nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Width | 5 mm | |
| Height | 1.75mm | |
| Standards/Approvals | IEC61249‐2‐21, JEDEC | |
| Length | 6.2mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N, Type P | ||
Maximum Continuous Drain Current Id 7.9A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series ISA | ||
Package Type PG-DSO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 35mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 8.1nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Width 5 mm | ||
Height 1.75mm | ||
Standards/Approvals IEC61249‐2‐21, JEDEC | ||
Length 6.2mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The Infineon OptiMOS 3 Power Transistors available in complementary N and P channel configurations, are designed for high efficiency switching applications. These MOSFETs feature very low on resistance (RDS(on)), which minimizes conduction losses and enhances overall system performance. Additionally, they offer superior thermal resistance, ensuring better heat dissipation and reliability in demanding applications. These characteristics make them ideal for various power management and energy efficient designs.
100% avalanche tested
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249‑2‑21
Liens connexes
- Infineon ISA Dual Dual N-Channel MOSFET 40 V, 8-Pin PG-DSO-8 ISA250250N04LMDSXTMA1
- Infineon ISA Dual N/P-Channel-Channel MOSFET 30 V, 8-Pin PG-DSO-8 ISA150233C03LMDSXTMA
- Infineon ISA Dual N/P-Channel-Channel MOSFET 40 V, 8-Pin PG-DSO-8 ISA170230C04LMDSXTMA1
- Infineon ISA Dual Dual N-Channel MOSFET 40 V, 8-Pin PG-DSO-8 ISA170170N04LMDSXTMA1
- Infineon ISA Dual N/P-Channel-Channel MOSFET 30 V, 3-Pin PG-TO252-3 ISA220280C03LMDSXTMA1
- Infineon P-Channel MOSFET 30 V, 8-Pin PG-DSO-8 BSO301SPHXUMA1
- Infineon P-Channel MOSFET 30 V, 8-Pin PG-DSO-8 BSO080P03SHXUMA1
- Infineon TLD5045EJXUMA1 8-Pin, PG-DSO-8 EP