Infineon ISA Type N, Type P-Channel MOSFET, 10.2 A, 30 V Enhancement, 8-Pin PG-DSO-8 ISA150233C03LMDSXTMA
- N° de stock RS:
- 348-906
- Référence fabricant:
- ISA150233C03LMDSXTMA
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 20 unités)*
10,92 €
(TVA exclue)
13,22 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 4 000 unité(s) expédiée(s) à partir du 04 juin 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 20 - 180 | 0,546 € | 10,92 € |
| 200 - 480 | 0,519 € | 10,38 € |
| 500 + | 0,481 € | 9,62 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 348-906
- Référence fabricant:
- ISA150233C03LMDSXTMA
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N, Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10.2A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PG-DSO-8 | |
| Series | ISA | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 23.3mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC61249‐2‐21, JEDEC | |
| Length | 6.2mm | |
| Height | 1.75mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N, Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10.2A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PG-DSO-8 | ||
Series ISA | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 23.3mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC61249‐2‐21, JEDEC | ||
Length 6.2mm | ||
Height 1.75mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The Infineon OptiMOS 3 Power Transistors available in complementary N and P channel configurations, are designed for high efficiency switching applications. These MOSFETs feature very low on resistance (RDS(on)), which minimizes conduction losses and enhances overall system performance. Additionally, they offer superior thermal resistance, ensuring better heat dissipation and reliability in demanding applications. These characteristics make them ideal for various power management and energy efficient designs.
100% avalanche tested
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249‑2‑21
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