Infineon OptiMOS P Type P-Channel MOSFET, 14.9 A, 20 V Enhancement, 8-Pin DSO
- N° de stock RS:
- 165-5906
- Référence fabricant:
- BSO201SPHXUMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 2500 unités)*
1 535,00 €
(TVA exclue)
1 857,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 18 juin 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 2500 + | 0,614 € | 1 535,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 165-5906
- Référence fabricant:
- BSO201SPHXUMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 14.9A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | DSO | |
| Series | OptiMOS P | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 12.9mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 66nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Operating Temperature | 150°C | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Height | 1.65mm | |
| Width | 4 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 14.9A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type DSO | ||
Series OptiMOS P | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 12.9mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 66nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Operating Temperature 150°C | ||
Length 5mm | ||
Standards/Approvals No | ||
Height 1.65mm | ||
Width 4 mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Liens connexes
- Infineon OptiMOS P Type P-Channel MOSFET 20 V Enhancement, 8-Pin DSO BSO201SPHXUMA1
- Infineon OptiMOS Type P-Channel MOSFET -30 V Enhancement, 8-Pin PG-DSO-8
- Infineon OptiMOS Type P-Channel MOSFET -30 V Enhancement, 8-Pin PG-DSO-8 BSO301SPHXUMA1
- Infineon BSO080P03S H OptiMOSTM-P Type P-Channel MOSFET -30 V Enhancement, 8-Pin PG-DSO-8
- Infineon BSO080P03S H OptiMOSTM-P Type P-Channel MOSFET -30 V Enhancement, 8-Pin PG-DSO-8 BSO080P03SHXUMA1
- Infineon OptiMOS P P-Channel MOSFET 30 V, 8-Pin DSO BSO200P03SHXUMA1
- Infineon Dual OptiMOS 2 Type N-Channel MOSFET 55 V Enhancement, 8-Pin DSO
- Infineon Dual OptiMOS 2 Type N-Channel MOSFET 55 V Enhancement, 8-Pin DSO BSO604NS2XUMA1