Infineon BSO080P03S H OptiMOSTM-P Type P-Channel MOSFET, -14.9 A, -30 V Enhancement, 8-Pin PG-DSO-8
- N° de stock RS:
- 273-5242
- Référence fabricant:
- BSO080P03SHXUMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
7,06 €
(TVA exclue)
8,545 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 85 unité(s) expédiée(s) à partir du 31 août 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 1,412 € | 7,06 € |
| 50 - 95 | 1,176 € | 5,88 € |
| 100 - 245 | 1,084 € | 5,42 € |
| 250 - 995 | 1,006 € | 5,03 € |
| 1000 + | 0,986 € | 4,93 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 273-5242
- Référence fabricant:
- BSO080P03SHXUMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -14.9A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Series | BSO080P03S H OptiMOSTM-P | |
| Package Type | PG-DSO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | -102nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -0.82V | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Operating Temperature | 150°C | |
| Width | 40mm | |
| Length | 40mm | |
| Standards/Approvals | IEC61249-2-21, JEDEC, RoHS | |
| Height | 1.5mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -14.9A | ||
Maximum Drain Source Voltage Vds -30V | ||
Series BSO080P03S H OptiMOSTM-P | ||
Package Type PG-DSO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs -102nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -0.82V | ||
Maximum Gate Source Voltage Vgs 25V | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Operating Temperature 150°C | ||
Width 40mm | ||
Length 40mm | ||
Standards/Approvals IEC61249-2-21, JEDEC, RoHS | ||
Height 1.5mm | ||
Automotive Standard No | ||
The Infineon MOSFET is a P channel power MOSFET. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on state resistance and figure of merit characteristics. It has 150 degree Celsius operating temperature and qualified according JEDEC for target applications.
Logic level
Halogen free
RoHS compliant
Pb free lead plating
Enhancement mode
Liens connexes
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