Infineon BSO080P03S H OptiMOSTM-P Type P-Channel MOSFET, -14.9 A, -30 V Enhancement, 8-Pin PG-DSO-8
- N° de stock RS:
- 273-5242
- Référence fabricant:
- BSO080P03SHXUMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
7,42 €
(TVA exclue)
8,98 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 90 unité(s) expédiée(s) à partir du 17 février 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 1,484 € | 7,42 € |
| 50 - 95 | 1,236 € | 6,18 € |
| 100 - 245 | 1,142 € | 5,71 € |
| 250 - 995 | 1,058 € | 5,29 € |
| 1000 + | 1,036 € | 5,18 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 273-5242
- Référence fabricant:
- BSO080P03SHXUMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -14.9A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Series | BSO080P03S H OptiMOSTM-P | |
| Package Type | PG-DSO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -0.82V | |
| Typical Gate Charge Qg @ Vgs | -102nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Operating Temperature | 150°C | |
| Length | 40mm | |
| Standards/Approvals | IEC61249-2-21, JEDEC, RoHS | |
| Width | 40 mm | |
| Height | 1.5mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -14.9A | ||
Maximum Drain Source Voltage Vds -30V | ||
Series BSO080P03S H OptiMOSTM-P | ||
Package Type PG-DSO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -0.82V | ||
Typical Gate Charge Qg @ Vgs -102nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Operating Temperature 150°C | ||
Length 40mm | ||
Standards/Approvals IEC61249-2-21, JEDEC, RoHS | ||
Width 40 mm | ||
Height 1.5mm | ||
Automotive Standard No | ||
The Infineon MOSFET is a P channel power MOSFET. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on state resistance and figure of merit characteristics. It has 150 degree Celsius operating temperature and qualified according JEDEC for target applications.
Logic level
Halogen free
RoHS compliant
Pb free lead plating
Enhancement mode
Liens connexes
- Infineon BSO080P03S H OptiMOSTM-P Type P-Channel MOSFET -30 V Enhancement, 8-Pin PG-DSO-8 BSO080P03SHXUMA1
- Infineon OptiMOS Type P-Channel MOSFET -30 V Enhancement, 8-Pin PG-DSO-8
- Infineon OptiMOS Type P-Channel MOSFET -30 V Enhancement, 8-Pin PG-DSO-8 BSO301SPHXUMA1
- Infineon OptiMOS P Type P-Channel MOSFET 20 V Enhancement, 8-Pin DSO
- Infineon OptiMOS P Type P-Channel MOSFET 20 V Enhancement, 8-Pin DSO BSO201SPHXUMA1
- Infineon ISA Type N 7.9 A 8-Pin PG-DSO-8 ISA250300C04LMDSXTMA1
- Infineon ISA Type N 9.6 A 8-Pin PG-DSO-8 ISA170230C04LMDSXTMA1
- Infineon ISA Type N 10.2 A 8-Pin PG-DSO-8 ISA150233C03LMDSXTMA