Infineon HEXFET N-Channel MOSFET, 8 A, 60 V Enhancement, 8-Pin SO-8 IRF7351TRPBF
- N° de stock RS:
- 273-2806
- Référence fabricant:
- IRF7351TRPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
10,30 €
(TVA exclue)
12,45 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 01 novembre 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 2,06 € | 10,30 € |
| 50 - 95 | 1,88 € | 9,40 € |
| 100 - 495 | 1,726 € | 8,63 € |
| 500 - 1995 | 1,474 € | 7,37 € |
| 2000 + | 1,442 € | 7,21 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 273-2806
- Référence fabricant:
- IRF7351TRPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SO-8 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 17.8mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SO-8 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 17.8mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
- Pays d'origine :
- PH
Infineon HEXFET Series MOSFET, 60V Maximum Drain-Source Voltage, 8A Maximum Continuous Drain Current - IRF7351TRPBF
This MOSFET is an N-channel enhancement device designed for surface-mounted power switching and control in Compact assemblies. It operates across an extended temperature range suitable for harsh environments and is supplied in an SO-8 package for automated assembly processes.
Features and Benefits:
• 17.8mΩ Rds(on) reduces conduction losses for high-current switching
• 60V Vds permits operation in moderate-voltage power stages
• 8A Id supports substantial continuous current delivery
• 36nC Qg improves switching control for drive-circuit design
• 2W Pd limits thermal stress in constrained PCB layouts
• 60V Vds permits operation in moderate-voltage power stages
• 8A Id supports substantial continuous current delivery
• 36nC Qg improves switching control for drive-circuit design
• 2W Pd limits thermal stress in constrained PCB layouts
Applications
• Suitable for high-current SMD power stages
• Ideal for automotive electronics operating extremes
• Used with Compact motor-driver modules
• Can be used for DC-DC converter output stages
• Suitable for surface-mounted load-switch implementations
• Ideal for automotive electronics operating extremes
• Used with Compact motor-driver modules
• Can be used for DC-DC converter output stages
• Suitable for surface-mounted load-switch implementations
What gate voltage limitations should be observed?
The gate must not exceed 20V relative to source to prevent damage.
How does thermal range affect deployment choices?
The device functions from -55°C to 150°C allowing use in extended-temperature environments.
What mounting method is required for this component?
It is intended for surface mounting in an SO-8 footprint for automated soldering.
What channel conduction mode is implemented?
The transistor operates in enhancement mode with N-type channel conduction.
Liens connexes
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