Vishay SIHP Type N-Channel MOSFET, 22 A, 650 V Enhancement, 3-Pin TO-220AB SIHP150N60E-GE3
- N° de stock RS:
- 268-8319
- Référence fabricant:
- SIHP150N60E-GE3
- Fabricant:
- Vishay
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10,82 €
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- N° de stock RS:
- 268-8319
- Référence fabricant:
- SIHP150N60E-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 22A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220AB | |
| Series | SIHP | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.158Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 179W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 22A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220AB | ||
Series SIHP | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.158Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 179W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Vishay SIHP Series MOSFET, 650V Maximum Drain Source Voltage, 22A Maximum Continuous Drain Current - SIHP150N60E-GE3
This n-channel MOSFET is a high-voltage power transistor designed for switching and amplification tasks in demanding electronic systems. It operates reliably across a wide temperature range and is supplied in a through‑hole TO-220AB package suitable for conventional board mounting. The device complies with RoHS directives and is intended for applications requiring substantial voltage handling and moderate current capability.
Features and Benefits:
• 650V drain rating enables use in high-voltage switching
• 22A continuous drain current supports sustained load flow
• 0.158Ω Rds(on) reduces conduction losses in power paths
• 36nC typical gate charge allows predictable switching profiles
• 179W maximum power dissipation handles significant thermal load
• 22A continuous drain current supports sustained load flow
• 0.158Ω Rds(on) reduces conduction losses in power paths
• 36nC typical gate charge allows predictable switching profiles
• 179W maximum power dissipation handles significant thermal load
Applications
• Suitable for high-voltage SMPS primary switching
• Ideal for industrial motor inverter stages
• Used with power supplies in telecom rectification
• Can be used for photovoltaic inverter front-ends
• Ideal for industrial motor inverter stages
• Used with power supplies in telecom rectification
• Can be used for photovoltaic inverter front-ends
What gate voltage limits should be observed during drive design?
The gate must not be driven beyond ±30V relative to source to prevent gate-oxide stress and ensure long-term reliability.
How does thermal management influence practical power handling?
The 179W dissipation rating requires adequate heatsinking and a thermal interface to maintain junction temperature below the 150°C maximum under continuous load.
What ambient temperature range can systems expect around this device?
It is specified to operate from -55°C up to 150°C, permitting use in environments with extreme cold and elevated thermal conditions when correctly mounted.
How does the device’s channel mode affect circuit behaviour?
As an enhancement-mode N-channel device, it remains off at zero gate bias and requires positive gate drive to conduct, simplifying control in low-side and high-side topologies.
Liens connexes
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