Vishay SIHG Type N-Channel MOSFET, 22 A, 650 V Enhancement, 3-Pin TO-247AC SIHG150N60E-GE3
- N° de stock RS:
- 268-8298
- Référence fabricant:
- SIHG150N60E-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 25 unités)*
65,15 €
(TVA exclue)
78,825 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | le tube* |
|---|---|---|
| 25 - 75 | 2,606 € | 65,15 € |
| 100 - 475 | 2,134 € | 53,35 € |
| 500 - 975 | 1,819 € | 45,48 € |
| 1000 + | 1,767 € | 44,18 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 268-8298
- Référence fabricant:
- SIHG150N60E-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 22A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247AC | |
| Series | SIHG | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.158Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 179W | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.7mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 22A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247AC | ||
Series SIHG | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.158Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 179W | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 15.7mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Vishay SIHG Series MOSFET, 650V Drain-Source Voltage, 22A Continuous Drain Current - SIHG150N60E-GE3
This N-channel MOSFET is designed to switch and control high-voltage power in industrial electronics and automation equipment. It operates as an enhancement-mode transistor for use in discrete power stages where high blocking voltage and significant current capacity are required. The device is supplied in a through-hole TO-247AC package suited to conventional assembly and heat-sinking arrangements.
Features and Benefits:
• 650V drain rating enables high-voltage switching applications • 22A continuous current supports substantial load handling • 0.158Ω low Rds(on) reduces conduction losses • 179W power dissipation allows robust thermal throughput • 36nC typical gate charge for predictable switching behaviour • 30V gate tolerance accommodates common drive voltages
Applications
• Suitable for high-voltage DC-DC converters in industrial systems • Ideal for switch-mode power supplies in manufacturing equipment • Used for motor drive stages requiring high-voltage switching • Can be used for line-side power conversion in automation racks • Used for laboratory power electronics development and testing
What temperature range can it operate within?
The device functions across a wide ambient span from -55°C up to a maximum junction limit of 150°C for demanding thermal environments.
How is it best mounted for heat management?
The through-hole TO-247AC format permits direct attachment to heatsinks using the package tab and standard mounting hardware to improve thermal transfer.
What gate drive considerations should be observed?
The gate should be driven within ±30V absolute limits and switching waveforms should account for the typical 36nC gate charge to manage transition losses and driver sizing.
What pin configuration is provided?
It is a three-pin transistor layout compatible with common power PCB footprints and through-hole assembly processes.
Liens connexes
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