Vishay SIHG Type N-Channel MOSFET, 22 A, 650 V Enhancement, 3-Pin TO-247AC SIHG150N60E-GE3
- N° de stock RS:
- 268-8298
- Référence fabricant:
- SIHG150N60E-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Sous-total (1 tube de 25 unités)*
75,175 €
(TVA exclue)
90,95 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | le tube* |
|---|---|---|
| 25 - 75 | 3,007 € | 75,18 € |
| 100 - 475 | 2,462 € | 61,55 € |
| 500 - 975 | 2,099 € | 52,48 € |
| 1000 + | 1,891 € | 47,28 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 268-8298
- Référence fabricant:
- SIHG150N60E-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 22A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247AC | |
| Series | SIHG | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.158Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 179W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 15.7mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 22A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247AC | ||
Series SIHG | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.158Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 179W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 15.7mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The Vishay E series power MOSFET which has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies and power factor correction power supplies.
Low effective capacitance
Avalanche energy rated
Low figure of merit
Liens connexes
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