Vishay SIHP N-Channel MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-220AB SIHP085N60EF-GE3
- N° de stock RS:
- 268-8317
- Référence fabricant:
- SIHP085N60EF-GE3
- Fabricant:
- Vishay
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11,77 €
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14,24 €
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- N° de stock RS:
- 268-8317
- Référence fabricant:
- SIHP085N60EF-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 34A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SIHP | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.084Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Power Dissipation Pd | 184W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 34A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SIHP | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.084Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Power Dissipation Pd 184W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Vishay SIHP Series MOSFET, 650V Drain Source Voltage, 34A Continuous Drain Current - SIHP085N60EF-GE3
This MOSFET is a high-voltage N-channel switching transistor designed for through-hole assembly in demanding power circuits. It operates across a broad temperature span, making it suitable for environments where thermal robustness is required, and it offers substantial continuous current capability and voltage handling for conversion and switching tasks.
Features and Benefits:
• 650V drain-source rating enables high-voltage switching
• 34A continuous drain current supports heavy-load applications
• 0.084Ω low RDS(on) minimises conduction losses
• 184W power dissipation allows high-power operation
• 63nC typical gate charge permits controlled switching transitions
• 1.2V forward voltage reduces drop in body-diode conduction
• 34A continuous drain current supports heavy-load applications
• 0.084Ω low RDS(on) minimises conduction losses
• 184W power dissipation allows high-power operation
• 63nC typical gate charge permits controlled switching transitions
• 1.2V forward voltage reduces drop in body-diode conduction
Applications
• Suitable for high-voltage power converters and inverters
• Ideal for switch-mode power supplies in industrial systems
• Used for motor-drive stages requiring high current handling
• Can be used for hard-switching topologies and energy recovery
• Suitable for laboratory and prototyping with through-hole mounting
• Ideal for switch-mode power supplies in industrial systems
• Used for motor-drive stages requiring high current handling
• Can be used for hard-switching topologies and energy recovery
• Suitable for laboratory and prototyping with through-hole mounting
What mounting method is required for board assembly?
It is supplied in a TO-220AB package intended for through-hole mounting and standard heatsinking options.
What gate drive voltage limits should I observe?
The maximum gate-source voltage is 30V, so gate-drive circuitry must keep within this limit to avoid damage.
How does it cope with temperature extremes during operation?
The device is rated to operate down to -55°C and up to 150°C, allowing use across wide ambient and elevated junction temperatures.
What polarity and mode does the channel present for circuit design?
It is an N-channel enhancement-mode device, requiring positive gate bias relative to the source for conduction.
Liens connexes
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