Name: Vishay SIHK Type N-Channel MOSFET, 16 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK185N60EF-T1GE3
Brand: Vishay
SKU: 268-8314
Price: 2.09 EUR
Availability: InStock

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	16A
	Maximum Drain Source Voltage Vds	650V
	Series	SIHK
	Package Type	PowerPAK 10 x 12
	Mount Type	PCB
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.193Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	32nC
	Maximum Power Dissipation Pd	114W
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	9.9mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 16A
	Maximum Drain Source Voltage Vds 650V
	Series SIHK
	Package Type PowerPAK 10 x 12
	Mount Type PCB
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.193Ω
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 32nC
	Maximum Power Dissipation Pd 114W
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 9.9mm
	Automotive Standard No

Datasheet - SIHK185N60EF-T1GE3

Pays d'origine :: CN

Vishay SIHK Series MOSFET, 650V Drain Source Voltage, 16A Continuous Drain Current - SIHK185N60EF-T1GE3

This MOSFET is a high-voltage N-channel transistor designed for power switching on PCB assemblies. It operates across a wide temperature range and suits industrial control and power-conversion environments where robust voltage handling and thermal tolerance are required.

Features and Benefits:

• 650V drain voltage enables high-voltage switching applications • 16A continuous drain current supports substantial load currents • 0.193Ω low Rds(on) reduces conduction losses and heat generation • 114W power dissipation allows sustained power handling • 32nC typical gate charge supports moderately fast switching speeds • 30V maximum gate drive permits flexible gate-control designs

Applications

• Suitable for high-voltage power converters and inverters • Ideal for switch-mode power supplies in industrial systems • Used for motor drive switching in automation equipment • Can be used for lighting ballast and electronic transformer control

What thermal extremes can it tolerate in system design?

It is specified to operate down to -55°C and up to 150°C, allowing use in environments with wide ambient temperature variation.

What mounting considerations are needed on a PCB?

It is intended for PCB mounting in a PowerPAK 10x12 package with eight pins, so PCB layout should provide adequate thermal vias and copper area for heat spreading.

How should gate drive be limited to protect the device?

The gate must not exceed ±30V relative to the source, so gate-drive circuitry should include clamping or regulation to prevent overvoltage.

What charge characteristic affects gate-driver selection?

The typical gate charge is 32nC at the specified gate bias, informing the required drive current and switching losses for gate-driver sizing.

Vishay SIHK Type N-Channel MOSFET, 16 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK185N60EF-T1GE3