Vishay SIHK Type N-Channel MOSFET, 16 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK185N60EF-T1GE3

N° de stock RS:: 268-8314
Référence fabricant:: SIHK185N60EF-T1GE3
Fabricant:: Vishay

Vishay SIHK Type N-Channel MOSFET, 16 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK185N60EF-T1GE3

Sous-total (1 bobine de 2000 unités)*

3 456,00 €

(TVA exclue)

4 182,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Dernier stock RS

2 000 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution

Unité	Prix par unité	la bobine*
2000 +	1,728 €	3 456,00 €

*Prix donné à titre indicatif

N° de stock RS:: 268-8314
Référence fabricant:: SIHK185N60EF-T1GE3
Fabricant:: Vishay

Spécifications

Documentation technique

Législations et de normes

Détails du produit

Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.

Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	16A
	Maximum Drain Source Voltage Vds	650V
	Series	SIHK
	Package Type	PowerPAK 10 x 12
	Mount Type	PCB
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.193Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	32nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30V
	Maximum Power Dissipation Pd	114W
	Maximum Operating Temperature	150°C
	Length	9.9mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 16A
	Maximum Drain Source Voltage Vds 650V
	Series SIHK
	Package Type PowerPAK 10 x 12
	Mount Type PCB
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.193Ω
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 32nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30V
	Maximum Power Dissipation Pd 114W
	Maximum Operating Temperature 150°C
	Length 9.9mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHK185N60EF-T1GE3

Pays d'origine :: CN

Vishay SIHK Series MOSFET, 650V Maximum Drain Source Voltage, 16A Maximum Continuous Drain Current - SIHK185N60EF-T1GE3

This MOSFET is a high-voltage N-channel transistor designed for power switching in PCB-mounted assemblies. It operates across a wide temperature span and complies with RoHS standards, making it suitable for industrial electronic systems requiring elevated voltage handling and thermal resilience.

Features and Benefits:

• 650V drain rating enabling high-voltage switching capability
• 16A continuous drain current supporting substantial load currents
• 114W power dissipation permitting sustained power handling
• 0.193Ω Rds(on) reducing conduction losses under load
• 32nC typical gate charge allowing predictable switching performance
• 30V maximum gate-source voltage providing robust gate tolerance

Applications

• Suitable for switching power supplies in high-voltage designs
• Ideal for industrial motor drives and inverter stages
• Used with renewable energy converters handling elevated voltages
• Can be used for power factor correction circuits on PCBs
• Suitable for general high-power transistor replacement in assemblies

What thermal range can it tolerate in demanding environments?

It is specified to operate from -55°C up to 150°C, accommodating both low-temperature storage and high-temperature operating conditions.

What mounting style does it require for PCB integration?

The device is supplied in a PowerPAK 10x12 package intended for PCB mounting to facilitate low-inductance connections and compact layouts.

How many pins are available for connection and grounding schemes?

It uses an 8-pin configuration which allows separation of gate, drain and source connections for flexible board routing.

Is it suitable for automotive-specific standards?

It is not classified to automotive standards and should be evaluated against vehicle-specific requirements before use.