Vishay SIHK Type N-Channel MOSFET, 30 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK085N60EF-T1GE3
- N° de stock RS:
- 268-8307
- Référence fabricant:
- SIHK085N60EF-T1GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
9,58 €
(TVA exclue)
11,59 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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Unité | Prix par unité |
|---|---|
| 1 - 49 | 9,58 € |
| 50 - 99 | 8,62 € |
| 100 - 249 | 7,07 € |
| 250 + | 6,91 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 268-8307
- Référence fabricant:
- SIHK085N60EF-T1GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerPAK 10 x 12 | |
| Series | SIHK | |
| Mount Type | PCB | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.085Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 184W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 9.9mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerPAK 10 x 12 | ||
Series SIHK | ||
Mount Type PCB | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.085Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 184W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 9.9mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Vishay SIHK Series MOSFET, 650V Maximum Drain Source Voltage, 30A Maximum Continuous Drain Current - SIHK085N60EF-T1GE3
This MOSFET is a high-voltage switching transistor designed for power conversion and switching applications where elevated voltage and thermal endurance are required. It is a PCB-mounted, N-channel enhancement device optimised for medium-current, high-voltage circuits in demanding thermal environments. The component conforms to RoHS directives and is intended for engineers specifying rugged discrete power transistors for industrial and power-electronics designs.
Features and Benefits:
• 650V maximum drain voltage delivers wide high-voltage headroom
• 30A continuous drain current supports substantial load currents
• 0.085 Ω Rds(on) reduces conduction losses in power paths
• 184W maximum power dissipation enables sustained high-power operation
• 63 nC typical gate charge allows predictable switching-drive requirements
• Gate-source limit ±30V protects gate-drive margin during transients
• 30A continuous drain current supports substantial load currents
• 0.085 Ω Rds(on) reduces conduction losses in power paths
• 184W maximum power dissipation enables sustained high-power operation
• 63 nC typical gate charge allows predictable switching-drive requirements
• Gate-source limit ±30V protects gate-drive margin during transients
Applications
• Suitable for high-voltage DC-DC converters in industrial systems
• Used for phase-leg switches in motor drive inverter stages
• Ideal for primary-side switchers in SMPS topologies
• Can be used for load switching in battery management systems
• Used with discrete power stages requiring compact package density
• Used for phase-leg switches in motor drive inverter stages
• Ideal for primary-side switchers in SMPS topologies
• Can be used for load switching in battery management systems
• Used with discrete power stages requiring compact package density
What temperature extremes can the device tolerate during operation?
It is specified to operate across a broad range from -55 °C up to 150 °C, covering low-temperature starts and elevated junction conditions.
Which package type should I expect for PCB assembly and thermal management?
It is supplied in a PowerPAK 10x12 package optimised for PCB mounting to aid heat spreading and low-inductance layouts.
What gate-drive considerations are implied by the gate charge value?
The typical 63 nC gate charge requires a driver capable of sourcing and sinking sufficient current to meet desired switching speeds while managing switching losses.
How does the channel configuration affect circuit design choices?
Being an N-channel enhancement device, it necessitates appropriate gate-drive polarity and is typically used on the low side or as a high-side switch with level shifting.
Liens connexes
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