Vishay SIHH Type N-Channel MOSFET, 13 A, 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH250N60EF-T1GE3
- N° de stock RS:
- 268-8303
- Référence fabricant:
- SIHH250N60EF-T1GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
9,41 €
(TVA exclue)
11,386 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 3 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 48 | 4,705 € | 9,41 € |
| 50 - 98 | 4,23 € | 8,46 € |
| 100 - 248 | 3,46 € | 6,92 € |
| 250 - 998 | 3,40 € | 6,80 € |
| 1000 + | 2,665 € | 5,33 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 268-8303
- Référence fabricant:
- SIHH250N60EF-T1GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerPAK 8 x 8 | |
| Series | SIHH | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.25Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 89W | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 8mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerPAK 8 x 8 | ||
Series SIHH | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.25Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 89W | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 8mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- TW
Vishay SIHH Series MOSFET, 650V Drain Source Voltage, 13A Continuous Drain Current - SIHH250N60EF-T1GE3
This MOSFET is a high-voltage N-channel transistor designed for switching and power conversion in industrial electrical systems. It is intended for surface-mounted assemblies where robust voltage handling and thermal endurance are required, and it operates across a wide temperature range to suit demanding environments.
Features and Benefits:
• 650V drain capability enables high-voltage switching applications • 13A continuous drain current supports substantial load currents • 0.25Ω Rds(on) reduces conduction losses during operation • 23nC typical gate charge allows controlled switching dynamics • 30V maximum gate drive tolerance accommodates standard gate drivers • 89W power dissipation permits sustained thermal loading
Applications
• Suitable for high-voltage power switching in industrial drives • Ideal for switch-mode power supplies requiring high Vds • Used for motor inverter stages handling moderate currents • Can be used for power factor correction modules in plant equipment
What mounting format is required for circuit assembly?
It uses a PowerPAK 8x8 surface package with four pins intended for low-inductance PCB mounting.
How does the device behave under extreme temperatures?
It is specified to operate from -55°C up to 150°C, allowing use in installations with wide thermal variation.
What is the maximum voltage between drain and source?
The maximum drain-source voltage rating is 650V, defining the upper limit for steady-state blocking voltage.
What gate drive limitations should be observed?
The gate-source voltage must not exceed 30V to avoid damaging the gate oxide.
Are there regulatory material restrictions noted?
The component is listed as RoHS-compliant, indicating restriction of certain hazardous substances.
Liens connexes
- Vishay SIHH Type N-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH250N60EF-T1GE3
- Vishay SIHH Type N-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH085N60EF-T1GE3
- Vishay SIHH Type N-Channel MOSFET 600 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH155N60EF-T1GE3
- Vishay EF Type N-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH125N60EF-T1GE3
- Vishay EF Type N-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH186N60EF-T1GE3
- Vishay EF Type N-Channel MOSFET 650 V Enhancement, 5-Pin PowerPAK 8 x 8 SIHH070N60EF-T1GE3
- Vishay SIHK Type N-Channel MOSFET 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK045N60EF-T1GE3
- Vishay SIHK Type N-Channel MOSFET 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK085N60EF-T1GE3
