Vishay EF N-Channel MOSFET, 36 A, 650 V Enhancement, 5-Pin PowerPAK 8 x 8 SIHH070N60EF-T1GE3
- N° de stock RS:
- 200-6830
- Référence fabricant:
- SIHH070N60EF-T1GE3
- Fabricant:
- Vishay
Actuellement indisponible
Désolés, nous ne savons pas quand ce produit sera réapprovisionné.
- N° de stock RS:
- 200-6830
- Référence fabricant:
- SIHH070N60EF-T1GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 36A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerPAK 8 x 8 | |
| Series | EF | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 71mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 75nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 202W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 8.1mm | |
| Width | 1.05mm | |
| Length | 8.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 36A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerPAK 8 x 8 | ||
Series EF | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 71mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 75nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 202W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 8.1mm | ||
Width 1.05mm | ||
Length 8.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay SIHH070N60EF-T1GE3 is a EF series power MOSFET with fast body diode.
4th generation E series technology
Low figure-of-merit
Low effective capacitance
Reduced switching and conduction losses
Avalanche energy rated (UIS)
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