Name: Vishay SIHH Type N-Channel MOSFET, 30 A, 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH085N60EF-T1GE3
Brand: Vishay
SKU: 268-8300
Price: 4.66 EUR
Availability: InStock

Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.

Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	650V
	Series	SIHH
	Package Type	PowerPAK 8 x 8
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	0.085Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	63nC
	Maximum Power Dissipation Pd	184W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Length	8mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 650V
	Series SIHH
	Package Type PowerPAK 8 x 8
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 0.085Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 63nC
	Maximum Power Dissipation Pd 184W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Length 8mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHH085N60EF-T1GE3

Pays d'origine :: TW

Vishay SIHH Series MOSFET, 650V Drain Source Voltage, 30A Drain Current - SIHH085N60EF-T1GE3

This n-channel MOSFET is a high-voltage switching device designed for use in power conversion and control systems within industrial and automation environments. It operates across a wide temperature range and is intended for surface-mounted assemblies where robust high-voltage handling and efficient switching are required.

Features and Benefits:

• 650V drain rating enabling high-voltage switching capability • 30A continuous drain current supporting sustained load operation • 0.085Ω Rds(on) reducing conduction losses in power paths • 63nC typical gate charge allowing predictable switching performance • 184W power dissipation for high thermal load handling • 150°C maximum junction temperature for elevated temperature use

Applications

• Suitable for industrial motor drive inverters requiring high-voltage devices • Used for power supplies in automation equipment with high switching demands • Ideal for switch-mode converters handling significant power dissipation • Can be used for high-voltage relay replacement in electrical control panels

What mounting style does it require on a board?

It is supplied in a PowerPAK 8x8 surface-mount package requiring compatible solder land patterns for thermal and electrical connection.

How does the gate voltage limit affect control circuitry?

The gate must be driven within ±30V to prevent gate dielectric stress, so gate drivers should provide appropriate voltage margins and protection.

What thermal conditions should be considered during design?

With a 184W dissipation rating and 150°C maximum operating temperature, thermal management such as heat spreading and adequate PCB copper is necessary to maintain safe junction temperatures.

What pin configuration complexity should designers expect?

The device has four pins, which require correct assignment in layout to ensure low-inductance connections for drain, source and gate functions.

Vishay SIHH Type N-Channel MOSFET, 30 A, 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH085N60EF-T1GE3