Vishay SIHH Type N-Channel MOSFET, 30 A, 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH085N60EF-T1GE3

N° de stock RS:: 268-8300
Référence fabricant:: SIHH085N60EF-T1GE3
Fabricant:: Vishay

Vishay SIHH Type N-Channel MOSFET, 30 A, 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH085N60EF-T1GE3

Sous-total (1 bobine de 3000 unités)*

11 544,00 €

(TVA exclue)

13 968,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Dernier stock RS

3 000 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution

Unité	Prix par unité	la bobine*
3000 +	3,848 €	11 544,00 €

*Prix donné à titre indicatif

N° de stock RS:: 268-8300
Référence fabricant:: SIHH085N60EF-T1GE3
Fabricant:: Vishay

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PowerPAK 8 x 8
	Series	SIHH
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	0.085Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30V
	Typical Gate Charge Qg @ Vgs	63nC
	Maximum Power Dissipation Pd	184W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	8mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 650V
	Package Type PowerPAK 8 x 8
	Series SIHH
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 0.085Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30V
	Typical Gate Charge Qg @ Vgs 63nC
	Maximum Power Dissipation Pd 184W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 8mm
	Automotive Standard No

Datasheet - SIHH085N60EF-T1GE3

Pays d'origine :: TW

Vishay SIHH Series MOSFET, 650V Maximum Drain Source Voltage, 30A Maximum Continuous Drain Current - SIHH085N60EF-T1GE3

This MOSFET is a high-voltage N-channel switching transistor designed for surface-mounted power applications. It operates across a wide temperature span and is suited to systems requiring robust drain-source voltage tolerance and substantial continuous current handling. The device meets RoHS requirements and is supplied in a compact PowerPAK 8x8 package for low-profile board mounting.

Features and Benefits:

• 650V drain-source rating for elevated-voltage switching
• 30A continuous drain current for sustained load handling
• 0.085Ω Rds(on) for reduced conduction losses
• 184W maximum dissipation for high-power thermal margin
• ±30V gate tolerance to accommodate varied gate-drive levels
• 63nC gate charge enabling predictable switching energy

Applications

• Suitable for high-voltage power supplies and inverters
• Ideal for motor-drive front-end switching stages
• Used with DC-DC converters requiring high power handling
• Can be used for industrial switch-mode power supplies
• Suitable for telecoms and server power-conversion modules

What thermal environment can it tolerate during operation?

The device is specified to function from -55°C up to 150°C, allowing deployment in demanding thermal conditions when paired with appropriate thermal management.

How does the package support board-level implementation?

The PowerPAK 8x8 surface-mount format provides a low-profile footprint with a four-pin arrangement suited to automated assembly and efficient PCB thermal routing.

What is the channel mode and its implication for circuit design?

It is an enhancement-mode N-channel device, so it requires a positive gate-to-source drive to switch on, enabling straightforward high-side or low-side switching topologies with appropriate gate drivers.

Are there environmental or regulatory material considerations?

The component conforms to RoHS material restrictions, indicating it is free from certain restricted substances for compliance-driven designs.