Vishay SIHB Type N-Channel MOSFET, 35 A, 600 V Enhancement, 3-Pin TO-263 SIHB080N60E-GE3
- N° de stock RS:
- 268-8290
- Référence fabricant:
- SIHB080N60E-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
11,45 €
(TVA exclue)
13,854 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 8 | 5,725 € | 11,45 € |
| 10 - 18 | 5,16 € | 10,32 € |
| 20 - 98 | 5,06 € | 10,12 € |
| 100 - 498 | 4,23 € | 8,46 € |
| 500 + | 3,60 € | 7,20 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 268-8290
- Référence fabricant:
- SIHB080N60E-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-263 | |
| Series | SIHB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.08Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Power Dissipation Pd | 227W | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.67mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-263 | ||
Series SIHB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.08Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Power Dissipation Pd 227W | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 10.67mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The Vishay power MOSFET with fast body diode and 4th generation E series technology has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies and power factor correction power supp
Low effective capacitance
Avalanche energy rated
Low figure of merit
Liens connexes
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