Vishay EF Type N-Channel Power MOSFET, 25 A, 600 V Enhancement, 3-Pin TO-263 SIHB125N60EF-GE3

N° de stock RS:: 204-7246
Référence fabricant:: SIHB125N60EF-GE3
Fabricant:: Vishay

Vishay EF Type N-Channel Power MOSFET, 25 A, 600 V Enhancement, 3-Pin TO-263 SIHB125N60EF-GE3

Sous-total (1 paquet de 5 unités)*

23,88 €

(TVA exclue)

28,895 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 04 décembre 2026

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Unité	Prix par unité	le paquet*
5 +	4,776 €	23,88 €

*Prix donné à titre indicatif

N° de stock RS:: 204-7246
Référence fabricant:: SIHB125N60EF-GE3
Fabricant:: Vishay

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	25A
	Maximum Drain Source Voltage Vds	600V
	Series	EF
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	125mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	179W
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	31nC
	Maximum Gate Source Voltage Vgs	30V
	Maximum Operating Temperature	150°C
	Width	9.65mm
	Standards/Approvals	RoHS
	Height	4.06mm
	Length	14.61mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 25A
	Maximum Drain Source Voltage Vds 600V
	Series EF
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 125mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 179W
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 31nC
	Maximum Gate Source Voltage Vgs 30V
	Maximum Operating Temperature 150°C
	Width 9.65mm
	Standards/Approvals RoHS
	Height 4.06mm
	Length 14.61mm
	Automotive Standard No

Datasheet - SIHB125N60EF-GE3

Vishay Series EF Power MOSFET, 600V Drain Source Voltage, 25A Continuous Drain Current - SIHB125N60EF-GE3

This power MOSFET is a high-voltage N-channel semiconductor device designed for switching and power-conversion roles in industrial electronics. It is intended for surface-mount use on power assemblies where robust voltage handling and elevated temperature tolerance are required, supporting applications that switch high voltages and substantial currents in automation and electrical systems.

Features and Benefits:

• 600V drain rating enables high-voltage switching capability • 25A continuous drain current supports substantial load currents • 125mΩ Rds(on) reduces conduction losses under load • 31nC typical gate charge minimises drive energy requirements • 179W power dissipation allows sustained power handling • 150°C maximum operating temperature supports high-temperature environments

Applications

• Suitable for high-voltage inverter stages in industrial drives • Ideal for power supplies requiring high breakdown voltage • Used with motor controllers handling tens of amperes • Can be used for relay replacement in solid-state switching • Used for power conversion in automation equipment

What gate voltage range is safe for switching the device?

The device accepts gate voltages up to 30V, specifying the maximum permissible gate-to-source potential for reliable operation.

How does package choice affect thermal performance?

The TO-263 package offers a large thermal pad and leads for heat conduction, aiding heat transfer to PCB copper and heatsinks to support the rated power dissipation.

What are the environmental limits for operation?

The component is specified to operate down to -55°C and up to 150°C, defining the allowable ambient and junction extremes for design margins.

How many pins are available for PCB layout considerations?

The part uses three pins, which determines footprint and connection arrangements for drain, source and gate on the PCB.