Vishay E Type N-Channel Power MOSFET, 22 A, 600 V Enhancement, 3-Pin TO-263 SIHB150N60E-GE3
- N° de stock RS:
- 279-9905
- Référence fabricant:
- SIHB150N60E-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
7,80 €
(TVA exclue)
9,44 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 986 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 8 | 3,90 € | 7,80 € |
| 10 - 28 | 3,815 € | 7,63 € |
| 30 - 98 | 3,74 € | 7,48 € |
| 100 + | 3,52 € | 7,04 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 279-9905
- Référence fabricant:
- SIHB150N60E-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 22A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-263 | |
| Series | E | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.137Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 179W | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.67mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 22A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-263 | ||
Series E | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.137Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 179W | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Length 10.67mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 600V Drain Source Voltage, 22A Continuous Drain Current - SIHB150N60E-GE3
This power MOSFET is a high-voltage N-channel semiconductor device designed for switching and power-conversion roles in demanding industrial environments. It operates across a wide ambient range and is supplied in a surface-mount TO-263 package for applications where board-mounted power handling and thermal management are required.
Features and Benefits:
• 600V drain rating enabling high-voltage switching
• 22A continuous drain current for sustained load handling
• 0.137Ω low Rds(on) reducing conduction losses
• 179W power dissipation for elevated thermal performance
• 36nC typical gate charge for predictable switching control
• 30V gate limit allowing robust gate-drive margins
• 22A continuous drain current for sustained load handling
• 0.137Ω low Rds(on) reducing conduction losses
• 179W power dissipation for elevated thermal performance
• 36nC typical gate charge for predictable switching control
• 30V gate limit allowing robust gate-drive margins
Applications
• Suitable for industrial motor drive inverters
• Ideal for offline switch-mode power supplies
• Used with high-voltage DC-DC converters
• Can be used for power factor correction stages
• Suitable for hard-switching topologies in power electronics
• Ideal for offline switch-mode power supplies
• Used with high-voltage DC-DC converters
• Can be used for power factor correction stages
• Suitable for hard-switching topologies in power electronics
What package considerations affect PCB thermal design?
The TO-263 surface-mount format requires a substantial copper area and thermal vias beneath the package to extract heat and exploit the 179W dissipation capability while maintaining junction temperatures.
How does gate-drive choice impact switching performance?
With a typical gate charge of 36nC and a maximum Vgs of 30V, driver current and slew-rate control directly influence switching losses and electromagnetic emissions during transitions.
What environmental extremes can the device tolerate?
It is specified to function from -55°C up to 150°C, allowing use in installations exposed to wide temperature fluctuations without derating for basic operation.
Are there constraints on polarity or channel operation?
The device is an enhancement-mode N-channel MOSFET, therefore it requires a positive gate-source voltage relative to the source to turn on and must be used accordingly in circuit topology.
Liens connexes
- Vishay SIHB Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Vishay SIHB Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263 SIHB085N60EF-GE3
- Vishay SiHB22N60EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 SIHB22N60EF-GE3
- Vishay EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 SiHB186N60EF-GE3
- Vishay SiHB125N60EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 SIHB125N60EF-GE3
- Vishay SiHB068N60EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 SIHB068N60EF-GE3
- Vishay SiHB105N60EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 SIHB105N60EF-GE3
- Vishay SiHFBC30AS Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 SIHFBC30AS-GE3