Vishay SIHA Type N-Channel MOSFET, 9 A, 650 V Enhancement, 8-Pin PowerPAK SO-8DC SIHA150N60E-GE3
- N° de stock RS:
- 268-8288
- Référence fabricant:
- SIHA150N60E-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
8,68 €
(TVA exclue)
10,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 998 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 8 | 4,34 € | 8,68 € |
| 10 - 18 | 3,92 € | 7,84 € |
| 20 - 98 | 3,84 € | 7,68 € |
| 100 - 498 | 3,21 € | 6,42 € |
| 500 + | 2,725 € | 5,45 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 268-8288
- Référence fabricant:
- SIHA150N60E-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerPAK SO-8DC | |
| Series | SIHA | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.158Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 179W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerPAK SO-8DC | ||
Series SIHA | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.158Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 179W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Vishay SIHA Series MOSFET, 650V Drain Source Voltage, 9A Continuous Drain Current - SIHA150N60E-GE3
This MOSFET is a high-voltage N-channel transistor designed for power switching in surface-mount applications. It operates across a broad temperature range and is intended for circuits requiring substantial voltage headroom and moderate continuous current. The device is supplied in a PowerPAK SO-8DC package suitable for compact board layouts.
Features and Benefits:
• 650V drain-to-source rating enables high-voltage switching
• 9A continuous drain current supports moderate power delivery
• 0.158Ω low Rds(on) reduces conduction losses
• 179W power dissipation allows elevated load handling
• 36nC typical gate charge provides predictable switching control
• ±30V gate tolerance permits robust gate-drive margins
• 9A continuous drain current supports moderate power delivery
• 0.158Ω low Rds(on) reduces conduction losses
• 179W power dissipation allows elevated load handling
• 36nC typical gate charge provides predictable switching control
• ±30V gate tolerance permits robust gate-drive margins
Applications
• Suitable for high-voltage power supplies and converters
• Ideal for industrial motor drive switching stages
• Used for server and telecoms power-management modules
• Can be used for LED drivers requiring high-voltage switches
• Appropriate for inverter and UPS power stages
• Ideal for industrial motor drive switching stages
• Used for server and telecoms power-management modules
• Can be used for LED drivers requiring high-voltage switches
• Appropriate for inverter and UPS power stages
What mounting style does it require for PCB assembly?
It is a surface-mount device supplied in a PowerPAK SO-8DC package, designed for reflow soldering onto PCB land patterns compatible with SO-8DC footprints.
How does it behave in extended temperature environments?
The transistor is rated to operate from -55°C up to 150°C, permitting use in systems exposed to low ambient conditions and elevated internal heating.
What gate-drive constraints should be observed?
The gate-to-source voltage must not exceed ±30V, so gate drivers should be limited within those bounds to prevent gate-oxide stress.
What standard restricts hazardous substances in this component?
The device conforms to RoHS requirements, indicating restrictions on certain hazardous materials during manufacture.
Liens connexes
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