Vishay SIHA Type N-Channel MOSFET, 9 A, 650 V Enhancement, 8-Pin PowerPAK SO-8DC SIHA150N60E-GE3

Offre groupée disponible
Consulter les options de prix de gros

Sous-total (1 paquet de 2 unités)*

8,68 €

(TVA exclue)

10,50 €

(TVA incluse)

Add to Basket
sélectionner ou taper la quantité
En stock
  • 998 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails

Unité
Prix par unité
le paquet*
2 - 84,34 €8,68 €
10 - 183,92 €7,84 €
20 - 983,84 €7,68 €
100 - 4983,21 €6,42 €
500 +2,725 €5,45 €

*Prix donné à titre indicatif

Options de conditionnement :
N° de stock RS:
268-8288
Référence fabricant:
SIHA150N60E-GE3
Fabricant:
Vishay
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

650V

Series

SIHA

Package Type

PowerPAK SO-8DC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.158Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

36nC

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

179W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

Pays d'origine :
CN

Vishay SIHA Series MOSFET, 650V Maximum Drain Source Voltage, 9A Maximum Continuous Drain Current - SIHA150N60E-GE3


This MOSFET is a high-voltage N‑channel switching device designed for surface‑mount power applications. It operates as an enhancement‑mode transistor suitable for industrial and electronic control environments where high‑voltage handling and Compact assembly are required.

Features and Benefits:


• 650V drain rating enables high‑voltage switching applications • 9 A continuous drain current supports moderate power loads • 0.158 Ω RDS(on) minimises conduction losses for efficiency • 36 nC typical gate charge allows predictable drive timing • 179W power dissipation manages substantial thermal loading • 150 °C maximum operating temperature permits elevated‑temperature use

Applications


• Suitable for high‑voltage power converters and inverters • Ideal for industrial motor‑drive switching stages • Used for switch‑mode power-supply primary‑side switches • Can be used for inductive‑load switching in automation systems

What gate‑drive constraints should I plan for?


The gate must be driven within ±30V with a typical gate charge of 36 nC

ensure your driver can supply the required charge and switching speed.

How should thermal management be approached for continuous operation?


With 179W dissipation capability and a maximum junction temperature of 150 °C, use appropriate PCB thermal vias, copper area, or heatsinking to maintain junction temperature within limits.

Is this device suitable for automotive qualification?


It is not specified as automotive‑standard compliant, so it should not be assumed suitable for certified automotive applications without additional validation.

What package and mounting considerations affect layout?


The device is supplied in a PowerPAK SO‑8DC surface‑mount package with eight pins

plan pad geometry and thermal pads for low thermal resistance and reliable solder joints.

Liens connexes

Soyez le/la premier·ère à être informé de nos nouveautés produits et de nos offres spéciales.

adresse e-mail

Les données personnelles que vous nous fournissez en vous inscrivant à cette liste de diffusion seront traitées conformément à notre politique de confidentialité.