Vishay SIHA Type N-Channel MOSFET, 9 A, 650 V Enhancement, 8-Pin PowerPAK SO-8DC SIHA150N60E-GE3
- N° de stock RS:
- 268-8287
- Référence fabricant:
- SIHA150N60E-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
108,95 €
(TVA exclue)
131,85 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 2,179 € | 108,95 € |
| 100 - 450 | 1,782 € | 89,10 € |
| 500 + | 1,514 € | 75,70 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 268-8287
- Référence fabricant:
- SIHA150N60E-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SIHA | |
| Package Type | PowerPAK SO-8DC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.158Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Power Dissipation Pd | 179W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SIHA | ||
Package Type PowerPAK SO-8DC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.158Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Power Dissipation Pd 179W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Vishay SIHA Series MOSFET, 650V Maximum Drain Source Voltage, 9A Maximum Continuous Drain Current - SIHA150N60E-GE3
This MOSFET is a high-voltage N‑channel switching device designed for surface‑mount power applications. It operates as an enhancement‑mode transistor suitable for industrial and electronic control environments where high‑voltage handling and Compact assembly are required.
Features and Benefits:
• 650V drain rating enables high‑voltage switching applications • 9 A continuous drain current supports moderate power loads • 0.158 Ω RDS(on) minimises conduction losses for efficiency • 36 nC typical gate charge allows predictable drive timing • 179W power dissipation manages substantial thermal loading • 150 °C maximum operating temperature permits elevated‑temperature use
Applications
• Suitable for high‑voltage power converters and inverters • Ideal for industrial motor‑drive switching stages • Used for switch‑mode power-supply primary‑side switches • Can be used for inductive‑load switching in automation systems
What gate‑drive constraints should I plan for?
The gate must be driven within ±30V with a typical gate charge of 36 nC
ensure your driver can supply the required charge and switching speed.
How should thermal management be approached for continuous operation?
With 179W dissipation capability and a maximum junction temperature of 150 °C, use appropriate PCB thermal vias, copper area, or heatsinking to maintain junction temperature within limits.
Is this device suitable for automotive qualification?
It is not specified as automotive‑standard compliant, so it should not be assumed suitable for certified automotive applications without additional validation.
What package and mounting considerations affect layout?
The device is supplied in a PowerPAK SO‑8DC surface‑mount package with eight pins
plan pad geometry and thermal pads for low thermal resistance and reliable solder joints.
Liens connexes
- Vishay SIHA Type N-Channel MOSFET 650 V Enhancement, 8-Pin PowerPAK SO-8DC SIHA150N60E-GE3
- Vishay Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK SO-8DC
- Vishay Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK SO-8DC SIDR500EP-T1-RE3
- Vishay SIDR Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK SO-8DC SIDR626EP-T1-RE3
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK SiHH080N60E-T1-GE3
- Vishay Type N-Channel MOSFET 100 V Depletion, 8-Pin PowerPAK SO-8DC
- Vishay Type N-Channel MOSFET 100 V Depletion, 8-Pin PowerPAK SO-8DC
- Vishay Type N-Channel MOSFET 100 V Depletion, 8-Pin PowerPAK SO-8DC