Vishay Type N-Channel MOSFET, 421 A, 30 V Enhancement, 8-Pin PowerPAK SO-8DC SIDR500EP-T1-RE3
- N° de stock RS:
- 252-0249
- Référence fabricant:
- SIDR500EP-T1-RE3
- Fabricant:
- Vishay
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
8,77 €
(TVA exclue)
10,612 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 5 984 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 4,385 € | 8,77 € |
| 20 - 98 | 4,135 € | 8,27 € |
| 100 - 198 | 3,725 € | 7,45 € |
| 200 - 498 | 3,51 € | 7,02 € |
| 500 + | 3,295 € | 6,59 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 252-0249
- Référence fabricant:
- SIDR500EP-T1-RE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 421A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK SO-8DC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00068mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 150W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 46.1nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.15mm | |
| Standards/Approvals | No | |
| Width | 5.15 mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 421A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK SO-8DC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00068mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 150W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 46.1nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 6.15mm | ||
Standards/Approvals No | ||
Width 5.15 mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.
TrenchFET Gen V power MOSFET
Very low RDS x Qg figure-of-merit (FOM)
Higher power density with very low RDS(on)
Thermally enhanced compact package
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