Infineon IPD Type P-Channel MOSFET, -80 A, -30 V Enhancement, 3-Pin PG-TO-252
- N° de stock RS:
- 258-3863
- Référence fabricant:
- IPD80P03P4L07ATMA2
- Fabricant:
- Infineon
Sous-total (1 bobine de 2500 unités)*
985,00 €
(TVA exclue)
1 192,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 21 avril 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 2500 + | 0,394 € | 985,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 258-3863
- Référence fabricant:
- IPD80P03P4L07ATMA2
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -80A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Package Type | PG-TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -0.31 V | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Forward Voltage Vf | -1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 88W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | DIN IEC 68-1, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -80A | ||
Maximum Drain Source Voltage Vds -30V | ||
Package Type PG-TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -0.31 V | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Forward Voltage Vf -1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 88W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals DIN IEC 68-1, RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS-P2 power-transistor is lowest switching and conduction power losses for highest thermal efficiency. Robust packages with superior quality and reliability.
No charge pump required for high side drive
Simple interface drive circuit
Highest current capability
Liens connexes
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