Infineon HEXFET Type N-Channel MOSFET, -12 A, -30 V SO-8

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Actuellement indisponible
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N° de stock RS:
257-9335
Référence fabricant:
IRF9388TRPBF
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

-12A

Maximum Drain Source Voltage Vds

-30V

Series

HEXFET

Package Type

SO-8

Mount Type

Surface

Maximum Drain Source Resistance Rds

11.9mΩ

Maximum Power Dissipation Pd

2.5W

Typical Gate Charge Qg @ Vgs

18nC

Maximum Gate Source Voltage Vgs

25 V

Forward Voltage Vf

-1.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRF series is the -30V p channel strong IRFET power mosfet in a SO 8 package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Industry standard surface mount package

Silicon optimized for applications switching below 100 kHz

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