Infineon HEXFET N-Channel MOSFET, 21 A, 30 V Enhancement, 8-Pin SO-8 IRF7862TRPBF

Sous-total (1 bobine de 4000 unités)*

2 056,00 €

(TVA exclue)

2 488,00 €

(TVA incluse)

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  • Expédition à partir du 08 mars 2027
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Prix par unité
la bobine*
4000 +0,514 €2 056,00 €

*Prix donné à titre indicatif

N° de stock RS:
257-9323
Référence fabricant:
IRF7862TRPBF
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

30V

Package Type

SO-8

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

4.5mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

30nC

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

2.5W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

Infineon HEXFET Series MOSFET, 30V Maximum Drain-Source Voltage, 21A Maximum Continuous Drain Current - IRF7862TRPBF


This N-channel enhancement-mode MOSFET in an SO-8 package is a surface-mount power transistor designed for high-current switching in Compact assemblies. It operates across a wide ambient range and complies with RoHS, making it suitable for applications that require Compact, lead-free SMD power devices.

Features and Benefits:


• 4.5mΩ Rds(on) delivers low conduction losses under load
• 30V Vds enables mid-voltage power switching capability
• 21A continuous drain current supports high-current circuits
• 30nC typical gate charge allows moderate switching speed control
• 2.5W power dissipation manages thermal loading in tight spaces

Applications


• Suitable for DC power distribution modules
• Ideal for board-level motor driver stages
• Used with voltage regulators for load switching
• Can be used for battery protection circuits
• Suitable for power management in Compact converters

What gate voltage limits must be observed?


The device must not exceed ±20V between gate and source to prevent gate dielectric stress.

How does the package affect thermal handling?


The SO-8 surface-mount package limits heat-sinking, so board copper and thermal vias are recommended to assist in dissipating the 2.5W allowable power.

What environmental temperature range can it withstand?


It is rated to operate from -55°C up to 150°C, suitable for wide-temperature deployments.

Is this device suitable for automotive qualification?


It is not specified as meeting automotive standards and should not be assumed to be automotive-grade.

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