Vishay E Type N-Channel Power MOSFET, 15 A, 600 V, 3-Pin TO-263 SIHB15N60E-GE3

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Sous-total (1 tube de 50 unités)*

121,80 €

(TVA exclue)

147,40 €

(TVA incluse)

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  • 950 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité
Prix par unité
le tube*
50 - 502,436 €121,80 €
100 - 4502,30 €115,00 €
500 - 9501,99 €99,50 €
1000 +1,693 €84,65 €

*Prix donné à titre indicatif

N° de stock RS:
256-7410
Référence fabricant:
SIHB15N60E-GE3
Fabricant:
Vishay
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Marque

Vishay

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

15A

Maximum Drain Source Voltage Vds

600V

Series

E

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.28Ω

Maximum Power Dissipation Pd

180W

Maximum Gate Source Voltage Vgs

30V

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

78nC

Maximum Operating Temperature

+150°C

Standards/Approvals

RoHS

Automotive Standard

No

Vishay Series E Power MOSFET, 600V Maximum Drain Source Voltage, 15A Maximum Continuous Drain Current - SIHB15N60E-GE3


This power MOSFET is a high-voltage switching device designed for surface-mount power electronics. It provides N‑channel conduction suitable for switching and power-management roles in industrial and commercial assemblies, operating across a broad ambient temperature range for demanding environments.

Features and Benefits:


• 600V drain rating enables high-voltage switching
• 15A continuous drain current supports substantial load currents
• Rds(on) 0.28Ω minimises conduction losses under load
• 180W power dissipation handles elevated thermal stress
• Gate charge 78nC at 30V Vgs allows predictable drive requirements
• TO‑263 surface package simplifies PCB assembly for power stages

Applications


• Suitable for high-voltage switch-mode power supplies
• Ideal for motor-drive front-end switching stages
• Used for lighting ballast and industrial controls
• Can be used for power conversion in renewable inverters
• Used with thermal-management boards for high-power modules

What gate-drive voltage range should be observed?


The device tolerates gate voltages up to 30V, so drive circuits must remain within this limit to prevent gate overstress.

How does the thermal environment affect reliability?


Junctions can operate in environments from -55°C to +150°C, requiring proper heat-sinking or PCB copper for sustained high-power use.

What package considerations are there for PCB design?


The TO‑263 3‑pin surface-mount outline demands large thermal pads and short high-current tracks to reduce parasitic resistance and improve cooling.

Is this suitable for automotive powertrain applications?


It is not classified to automotive standards, so it should not be used where automotive-specific qualifications are required.

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