Name: Vishay E Type N-Channel Power MOSFET, 15 A, 600 V, 3-Pin TO-263 SIHB15N60E-GE3
Brand: Vishay
SKU: 256-7411
Price: 3.56 EUR
Availability: BackOrder

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	15A
	Maximum Drain Source Voltage Vds	600V
	Series	E
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.28Ω
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	30V
	Typical Gate Charge Qg @ Vgs	78nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	180W
	Maximum Operating Temperature	+150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 15A
	Maximum Drain Source Voltage Vds 600V
	Series E
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.28Ω
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 30V
	Typical Gate Charge Qg @ Vgs 78nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 180W
	Maximum Operating Temperature +150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHB15N60E-GE3

Vishay Series E Power MOSFET, 600V Drain Source Voltage, 15A Continuous Drain Current - SIHB15N60E-GE3

This power MOSFET is a high-voltage N-channel transistor designed for switching and power-conversion tasks in industrial electronics. It operates across a wide temperature range and is supplied in a Compact surface-mount package suitable for thermal management in board-level power assemblies.

Features and Benefits:

• 600V drain rating enables high-voltage switching applications • 15A continuous current supports medium-power loads • 0.28 Ω on-resistance reduces conduction losses • 78 nC typical gate charge allows predictable switching behaviour • 180W power dissipation supports elevated load handling • 150 °C maximum operating temperature endures high thermal stress

Applications

• Suitable for high-voltage power supplies and converters • Ideal for motor-drive switching in automation systems • Used for industrial lighting and ballast-control circuits • Can be used for energy management and inverter stages • Used with heat-sinked boards in power-distribution modules

What gate voltage limits should be observed during design?

The device must not be subjected to gate-source voltages exceeding 30V to avoid gate-oxide stress.

How should thermal conditions be managed on a PCB?

Design a dedicated copper pad and heat-spreading area for the TO-263 package to maintain junction temperatures below rated limits under specified power dissipation.

What environmental temperature range can components be expected to tolerate?

It is specified to operate down to -55 °C and up to +150 °C, making it suitable for harsh ambient conditions and elevated junction scenarios.

Is this device matched to automotive specification levels?

It is not classified as an automotive-grade component and should be evaluated accordingly for vehicle applications.

Vishay E Type N-Channel Power MOSFET, 15 A, 600 V, 3-Pin TO-263 SIHB15N60E-GE3

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