onsemi NTB Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin HPSOF-8L
- N° de stock RS:
- 254-7666
- Référence fabricant:
- NTBL045N065SC1
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 bobine de 2000 unités)*
12 640,00 €
(TVA exclue)
15 300,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 15 juin 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 2000 - 2000 | 6,32 € | 12 640,00 € |
| 4000 - 4000 | 6,158 € | 12 316,00 € |
| 6000 + | 6,004 € | 12 008,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 254-7666
- Référence fabricant:
- NTBL045N065SC1
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | NTB | |
| Package Type | HPSOF-8L | |
| Mount Type | Through Hole | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 4.5V | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 105nC | |
| Maximum Power Dissipation Pd | 117W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series NTB | ||
Package Type HPSOF-8L | ||
Mount Type Through Hole | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 4.5V | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 105nC | ||
Maximum Power Dissipation Pd 117W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 33 mohm, 650 V, M2, TOLL Silicon Carbide (SiC) MOSFET - 33 mohm, 650 V, M2, TOLL
The ON Semiconductor NTB series of a silicon carbide mosfet uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition with the low on resistance and compact chip size. It ensures a low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Zero reverse recovery current of body diode
Ultra low gate charge
High speed switching and low capacitance
Liens connexes
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