onsemi EliteSiC Type N-Channel MOSFET, 77 A, 650 V N, 8-Pin HPSOF-8L NTBL023N065M3S
- N° de stock RS:
- 333-415
- Référence fabricant:
- NTBL023N065M3S
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 ruban de 1 unité)*
14,66 €
(TVA exclue)
17,74 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 1 993 unité(s) expédiée(s) à partir du 13 avril 2026
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Ruban(s) | le ruban |
|---|---|
| 1 - 9 | 14,66 € |
| 10 - 99 | 13,20 € |
| 100 + | 12,18 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 333-415
- Référence fabricant:
- NTBL023N065M3S
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 77A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | EliteSiC | |
| Package Type | HPSOF-8L | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 32.6mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 6V | |
| Typical Gate Charge Qg @ Vgs | 69nC | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 312W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 9.9mm | |
| Standards/Approvals | Halide Free and RoHS with Exemption 7a, Pb-Free | |
| Height | 2.3mm | |
| Width | 10.38 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 77A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series EliteSiC | ||
Package Type HPSOF-8L | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 32.6mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 6V | ||
Typical Gate Charge Qg @ Vgs 69nC | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 312W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 9.9mm | ||
Standards/Approvals Halide Free and RoHS with Exemption 7a, Pb-Free | ||
Height 2.3mm | ||
Width 10.38 mm | ||
Automotive Standard No | ||
- Pays d'origine :
- PH
The ON Semiconductor SiC MOSFET optimized for high-efficiency switching applications, offering low conduction losses and robust thermal performance. Its advanced design enhances reliability in demanding power systems while maintaining compact packaging. This device ensures efficient operation with minimal energy dissipation.
H PSOF8L package
RoHS compliant
Pb free
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