onsemi NTBL Type N-Channel MOSFET, 37 A, 650 V Enhancement, 8-Pin HPSOF-8L NTBL075N065SC1
- N° de stock RS:
- 220-564
- Référence fabricant:
- NTBL075N065SC1
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 ruban de 1 unité)*
6,85 €
(TVA exclue)
8,29 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 2 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Ruban(s) | le ruban |
|---|---|
| 1 - 9 | 6,85 € |
| 10 - 99 | 6,18 € |
| 100 - 499 | 5,70 € |
| 500 - 999 | 5,28 € |
| 1000 + | 4,28 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 220-564
- Référence fabricant:
- NTBL075N065SC1
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 37A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | NTBL | |
| Package Type | HPSOF-8L | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 85mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 22.6 V | |
| Maximum Power Dissipation Pd | 139W | |
| Forward Voltage Vf | 4.4V | |
| Typical Gate Charge Qg @ Vgs | 59nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.3mm | |
| Length | 9.9mm | |
| Width | 10.38 mm | |
| Standards/Approvals | RoHS | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 37A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series NTBL | ||
Package Type HPSOF-8L | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 85mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 22.6 V | ||
Maximum Power Dissipation Pd 139W | ||
Forward Voltage Vf 4.4V | ||
Typical Gate Charge Qg @ Vgs 59nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 2.3mm | ||
Length 9.9mm | ||
Width 10.38 mm | ||
Standards/Approvals RoHS | ||
- Pays d'origine :
- PH
The ON Semiconductor Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
High Speed Switching with Low Capacitance
RoHS Compliant
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