onsemi NTBL Type N-Channel MOSFET, 37 A, 650 V Enhancement, 8-Pin HPSOF-8L NTBL075N065SC1
- N° de stock RS:
- 220-564
- Référence fabricant:
- NTBL075N065SC1
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 ruban de 1 unité)*
7,61 €
(TVA exclue)
9,21 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- 2 000 unité(s) expédiée(s) à partir du 13 avril 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Ruban(s) | le ruban |
|---|---|
| 1 - 9 | 7,61 € |
| 10 - 99 | 6,86 € |
| 100 - 499 | 6,32 € |
| 500 - 999 | 5,87 € |
| 1000 + | 4,75 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 220-564
- Référence fabricant:
- NTBL075N065SC1
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 37A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | HPSOF-8L | |
| Series | NTBL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 85mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 4.4V | |
| Typical Gate Charge Qg @ Vgs | 59nC | |
| Maximum Power Dissipation Pd | 139W | |
| Maximum Operating Temperature | 175°C | |
| Length | 9.9mm | |
| Height | 2.3mm | |
| Standards/Approvals | RoHS | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 37A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type HPSOF-8L | ||
Series NTBL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 85mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 4.4V | ||
Typical Gate Charge Qg @ Vgs 59nC | ||
Maximum Power Dissipation Pd 139W | ||
Maximum Operating Temperature 175°C | ||
Length 9.9mm | ||
Height 2.3mm | ||
Standards/Approvals RoHS | ||
- Pays d'origine :
- PH
The ON Semiconductor Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
High Speed Switching with Low Capacitance
RoHS Compliant
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