onsemi NTBL Type N-Channel MOSFET, 46 A, 650 V Enhancement, 8-Pin HPSOF-8L NTBL060N065SC1
- N° de stock RS:
- 220-562
- Référence fabricant:
- NTBL060N065SC1
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 ruban de 1 unité)*
8,27 €
(TVA exclue)
10,01 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 2 000 unité(s) expédiée(s) à partir du 13 avril 2026
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Ruban(s) | le ruban |
|---|---|
| 1 - 9 | 8,27 € |
| 10 - 99 | 7,44 € |
| 100 - 499 | 6,86 € |
| 500 - 999 | 6,37 € |
| 1000 + | 5,17 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 220-562
- Référence fabricant:
- NTBL060N065SC1
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 46A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | HPSOF-8L | |
| Series | NTBL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 4.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 170W | |
| Typical Gate Charge Qg @ Vgs | 74nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.3mm | |
| Length | 9.9mm | |
| Standards/Approvals | RoHS Compliant | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 46A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type HPSOF-8L | ||
Series NTBL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 4.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 170W | ||
Typical Gate Charge Qg @ Vgs 74nC | ||
Maximum Operating Temperature 175°C | ||
Height 2.3mm | ||
Length 9.9mm | ||
Standards/Approvals RoHS Compliant | ||
- Pays d'origine :
- PH
The ON Semiconductor Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
High Speed Switching with Low Capacitance
RoHS Compliant
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