onsemi NTBL Type N-Channel MOSFET, 46 A, 650 V Enhancement, 8-Pin HPSOF-8L NTBL060N065SC1
- N° de stock RS:
- 220-562
- Référence fabricant:
- NTBL060N065SC1
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 ruban de 1 unité)*
8,11 €
(TVA exclue)
9,81 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 2 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Ruban(s) | le ruban |
|---|---|
| 1 - 9 | 8,11 € |
| 10 - 99 | 7,30 € |
| 100 - 499 | 6,73 € |
| 500 - 999 | 6,25 € |
| 1000 + | 5,08 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 220-562
- Référence fabricant:
- NTBL060N065SC1
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 46A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | HPSOF-8L | |
| Series | NTBL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 4.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 170W | |
| Typical Gate Charge Qg @ Vgs | 74nC | |
| Maximum Gate Source Voltage Vgs | 22.6 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Height | 2.3mm | |
| Width | 10.38 mm | |
| Length | 9.9mm | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 46A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type HPSOF-8L | ||
Series NTBL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 4.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 170W | ||
Typical Gate Charge Qg @ Vgs 74nC | ||
Maximum Gate Source Voltage Vgs 22.6 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Height 2.3mm | ||
Width 10.38 mm | ||
Length 9.9mm | ||
- Pays d'origine :
- PH
The ON Semiconductor Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
High Speed Switching with Low Capacitance
RoHS Compliant
Liens connexes
- onsemi NTBL SiC N-Channel MOSFET 650 V, 8-Pin H-PSOF8L NTBL075N065SC1
- onsemi NTBL02 SiC N-Channel MOSFET 650 V, 8-Pin H-PSOF8L NTBL023N065M3S
- onsemi NTBL032 SiC N-Channel MOSFET 650 V, 8-Pin H-PSOF8L NTBL032N065M3S
- onsemi NTBL050N65S N-Channel MOSFET 650 V, 8-Pin H-PSOF8L NTBL050N65S3H
- onsemi SUPERFET III N-Channel MOSFET 650 V, 8-Pin H-PSOF8L NTBL082N65S3HF
- onsemi SiC Power SiC N-Channel MOSFET 650 V, 4-Pin TO-247-4 NTH4L060N090SC1
- onsemi N-Channel MOSFET 80 V, 8-Pin H-PSOF8L NVBLS1D7N08H
- onsemi N-Channel MOSFET 150 V, 8-Pin H-PSOF8L NTBLS4D0N15MC
