Vishay Dual SiZF5300DT 2 Type N-Channel MOSFET, 125 A, 30 V, 12-Pin PowerPAIR 3 x 3FS
- N° de stock RS:
- 252-0292
- Référence fabricant:
- SIZF5300DT-T1-GE3
- Fabricant:
- Vishay
Sous-total (1 bobine de 3000 unités)*
2 043,00 €
(TVA exclue)
2 472,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 6 000 unité(s) expédiée(s) à partir du 08 juin 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 0,681 € | 2 043,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 252-0292
- Référence fabricant:
- SIZF5300DT-T1-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 125A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAIR 3 x 3FS | |
| Series | SiZF5300DT | |
| Mount Type | Surface | |
| Pin Count | 12 | |
| Maximum Drain Source Resistance Rds | 0.00351Ω | |
| Typical Gate Charge Qg @ Vgs | 9.5nC | |
| Maximum Power Dissipation Pd | 56.8W | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Height | 3.3mm | |
| Standards/Approvals | No | |
| Length | 3.3mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 125A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAIR 3 x 3FS | ||
Series SiZF5300DT | ||
Mount Type Surface | ||
Pin Count 12 | ||
Maximum Drain Source Resistance Rds 0.00351Ω | ||
Typical Gate Charge Qg @ Vgs 9.5nC | ||
Maximum Power Dissipation Pd 56.8W | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Height 3.3mm | ||
Standards/Approvals No | ||
Length 3.3mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The Field-Effect means that they are controlled by voltage. N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.
TrenchFET Gen V power MOSFET
Symmetric dual N-channel
Flip chip technology optimal thermal design
High side and low side MOSFETs form optimized
Combination for 50 % duty cycle
Optimized RDS - Qg and RDS - Qgd FOM elevates efficiency
For high frequency swi
Liens connexes
- Vishay Dual SiZF5300DT 2 Type N-Channel MOSFET 30 V, 12-Pin PowerPAIR 3 x 3FS SIZF5300DT-T1-GE3
- Vishay Dual 2 Type N-Channel Dual N-Channel 30 V (D-S) MOSFET 30 V, 12-Pin PowerPAIR 3 x 3FS
- Vishay Dual 2 Type N-Channel Dual N-Channel 30 V (D-S) MOSFET 30 V, 12-Pin PowerPAIR 3 x 3FS SIZF5302DT-T1-RE3
- Vishay SIZF456LDT Dual N-Channel MOSFET 70 V Enhancement, 8-Pin PowerPAIR 3 x 3FS SIZF456LDT-T1-UE3
- Vishay SIZF5302DT Dual N-Channel MOSFET 30 V Enhancement, 12-Pin PowerPAIR 3 x 3FS SIZF5302DT-T1-UE3
- Vishay Symmetric Dual N Channel 2 Type N-Channel MOSFET 40 V, 8-Pin PowerPAIR 6 x 5FS
- Vishay Symmetric Dual N Channel 2 Type N-Channel MOSFET 40 V, 8-Pin PowerPAIR 6 x 5FS SIZF640DT-T1-GE3
- Vishay Type N-Channel MOSFET 30 V PowerPAIR