Vishay EF Type N-Channel Power MOSFET, 40 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12

N° de stock RS:: 252-0263
Référence fabricant:: SIHK055N60EF-T1GE3
Fabricant:: Vishay

Vishay EF Type N-Channel Power MOSFET, 40 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12

Sous-total (1 bobine de 2000 unités)*

7 066,00 €

(TVA exclue)

8 550,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

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2 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution

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Unité	Prix par unité	la bobine*
2000 +	3,533 €	7 066,00 €

*Prix donné à titre indicatif

N° de stock RS:: 252-0263
Référence fabricant:: SIHK055N60EF-T1GE3
Fabricant:: Vishay

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PowerPAK 10 x 12
	Series	EF
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.05mΩ
	Channel Mode	Depletion
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	90nC
	Maximum Power Dissipation Pd	236W
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	+150°C
	Length	6.15mm
	Standards/Approvals	RoHS
	Width	5.15mm
	Automotive Standard	AEC-Q101

	Sélectionner tout
	Marque Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 650V
	Package Type PowerPAK 10 x 12
	Series EF
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.05mΩ
	Channel Mode Depletion
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 90nC
	Maximum Power Dissipation Pd 236W
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature +150°C
	Length 6.15mm
	Standards/Approvals RoHS
	Width 5.15mm
	Automotive Standard AEC-Q101

Datasheet - SIHK055N60EF-T1GE3

Vishay Series EF Power MOSFET, 650V Drain Source Voltage, 40A Maximum Continuous Drain Current - SIHK055N60EF-T1GE3

This power MOSFET is a high-voltage, N‑channel device designed for demanding power-conversion and automotive applications. It operates across a wide temperature range and is intended for surface-mount deployment where robust switching, high voltage tolerance and automotive qualification are required.

Features and Benefits:

• 650V drain rating enables high-voltage switching applications • 40A continuous current supports substantial load currents • 0.05mΩ Rds(on) minimises conduction losses during operation • 236W power dissipation allows high thermal throughput • 90nC typical gate charge reduces switching energy per transition • AEC-Q101 qualification meets automotive stress and reliability needs

Applications

• Suitable for traction inverter stages in automotive electronics • Ideal for high-voltage DC-DC converters in industrial automation • Used for switch-mode power supplies in power distribution systems • Can be used for motor-drive stages requiring high current capacity • Suitable for Compact surface-mounted power modules

What gate-drive considerations are required for efficient switching?

Drive circuits should accommodate up to ±20V gate excursion and supply sufficient Peak current to charge the 90nC gate to the chosen Vgs for the defined switching speed while managing switching losses.

How does thermal management affect continuous operation?

To sustain the 236W dissipation, thermal pathways such as large copper planes or heatsinking to the PowerPAK substrate are necessary to keep junction temperatures within the specified +150°C limit.

What mounting and layout practices improve performance?

Use low-inductance surface-mount layouts with short, wide tracks for drain and source, and place gate resistors and decoupling close to the pins to reduce ringing and electromagnetic interference.

What environmental range can be expected for field use?

The device is specified for operation from -55°C up to +150°C, supporting a broad span of ambient and elevated junction conditions in industrial and automotive environments.