Vishay EF Type N-Channel Power MOSFET, 33 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK075N60EF-T1GE3
- N° de stock RS:
- 252-0266
- Référence fabricant:
- SIHK075N60EF-T1GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
7,16 €
(TVA exclue)
8,66 €
(TVA incluse)
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 7,16 € |
| 10 - 24 | 6,73 € |
| 25 - 49 | 6,10 € |
| 50 - 99 | 5,72 € |
| 100 + | 5,38 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 252-0266
- Référence fabricant:
- SIHK075N60EF-T1GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerPAK 10 x 12 | |
| Series | EF | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.061Ω | |
| Channel Mode | Depletion | |
| Maximum Power Dissipation Pd | 192W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 72nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Width | 5.15mm | |
| Length | 6.15mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerPAK 10 x 12 | ||
Series EF | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.061Ω | ||
Channel Mode Depletion | ||
Maximum Power Dissipation Pd 192W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 72nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Width 5.15mm | ||
Length 6.15mm | ||
Automotive Standard AEC-Q101 | ||
Vishay Series EF Power MOSFET, 650V Maximum Drain Source Voltage, 33A Maximum Continuous Drain Current - SIHK075N60EF-T1GE3
This power MOSFET is a high-voltage switching device designed for demanding power-electronics and automotive environments. It operates as an N-channel depletion-mode transistor suited to high-voltage applications, offering a balance of current capability and thermal endurance for industrial control and vehicle electronic systems.
Features and Benefits:
• 650V rating enables high-voltage switching applications • 33A continuous drain current supports substantial load currents • 0.061Ω low Rds(on) reduces conduction losses • 192W power dissipation permits elevated power handling • 72nC typical gate charge allows predictable gate-drive sizing • 20V maximum gate-source voltage accommodates robust drive ranges
Applications
• Suitable for inverter and motor-drive stages in automation systems • Ideal for high-voltage DC-DC converters in electrified vehicles • Used for primary switches in power supplies for industrial equipment • Can be used for traction and auxiliary vehicle power electronics
What temperature range can it withstand during operation?
It is specified to operate from -55°C up to +150°C, permitting use across wide ambient and thermal conditions typical in automotive and industrial installations.
Which package type should designers account for on the board?
The device is supplied in an 8-pin PowerPAK 10x12 surface-mount package, so thermal pad layout and soldering profiles for that package should be applied.
What gate-drive constraints must be observed for reliable switching?
The maximum gate-source voltage is 20V
gate drivers should be designed to remain within that limit while providing sufficient slew to manage the 72nC gate charge.
Are there any approvals or environmental standards noted for this device?
It meets RoHS requirements and adheres to the AEC-Q101 automotive standard for component qualification.
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