Vishay EF N-Channel Power MOSFET, 26 A, 650 V Depletion, 4-Pin PowerPAK 8 x 8 SiHH105N60EF-T1GE3
- N° de stock RS:
- 239-8632
- Référence fabricant:
- SiHH105N60EF-T1GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
5,94 €
(TVA exclue)
7,19 €
(TVA incluse)
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 5,94 € |
| 10 - 49 | 5,59 € |
| 50 - 99 | 5,05 € |
| 100 - 249 | 4,75 € |
| 250 + | 4,45 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 239-8632
- Référence fabricant:
- SiHH105N60EF-T1GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | EF | |
| Package Type | PowerPAK 8 x 8 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.091Ω | |
| Channel Mode | Depletion | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 174W | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Power MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series EF | ||
Package Type PowerPAK 8 x 8 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.091Ω | ||
Channel Mode Depletion | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 174W | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Vishay Series EF Power MOSFET, 650V Maximum Drain Source Voltage, 26A Maximum Continuous Drain Current - SiHH105N60EF-T1GE3
This power MOSFET is a high-voltage switching transistor designed for surface-mount applications in industrial and automotive environments. It operates across a wide temperature span and is intended for circuits requiring robust high-voltage switching with moderate continuous current capacity and gate drive characteristics.
Features and Benefits:
• 650V drain-source rating enables high-voltage switching
• 26A continuous drain current supports substantial load currents
• 0.091Ω low Rds(on) reduces conduction losses
• 174W power dissipation allows sustained thermal loading
• 33nC typical gate charge enables predictable drive requirements
• 30V gate-rated voltage supports common gate-drive schemes
• 26A continuous drain current supports substantial load currents
• 0.091Ω low Rds(on) reduces conduction losses
• 174W power dissipation allows sustained thermal loading
• 33nC typical gate charge enables predictable drive requirements
• 30V gate-rated voltage supports common gate-drive schemes
Applications
• Suitable for high-voltage DC-DC converters in industrial power supplies
• Ideal for automotive power modules meeting AEC‑Q101 needs
• Used for primary-side switching in SMPS and inverters
• Can be used for motor drive half‑bridge stages in electrified systems
• Suitable for ruggedised electronic assemblies requiring surface mounting
• Ideal for automotive power modules meeting AEC‑Q101 needs
• Used for primary-side switching in SMPS and inverters
• Can be used for motor drive half‑bridge stages in electrified systems
• Suitable for ruggedised electronic assemblies requiring surface mounting
What mounting format does it use for compact assemblies?
It is supplied in a PowerPAK 8x8 format designed for surface mounting to facilitate dense PCB layouts and thermal coupling to copper pours.
How does it perform across temperature extremes?
It is specified to operate from -55°C up to +150°C, so it can function in demanding ambient and elevated junction scenarios when cooled appropriately.
What gate-drive constraints should be observed?
The device must not be driven beyond a gate-source voltage of 30V and typical gate charge is 33nC, which informs peak drive current and driver selection.
Is it suitable for automotive qualification requirements?
The device meets the AEC‑Q101 automotive standard, making it appropriate for vehicle‑grade electronic designs that require that qualification.
Liens connexes
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