Vishay EF Type N-Channel Power MOSFET, 33 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12

N° de stock RS:: 252-0265
Référence fabricant:: SIHK075N60EF-T1GE3
Fabricant:: Vishay

Vishay EF Type N-Channel Power MOSFET, 33 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12

Sous-total (1 bobine de 2000 unités)*

6 124,00 €

(TVA exclue)

7 410,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 16 octobre 2026

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Unité	Prix par unité	la bobine*
2000 +	3,062 €	6 124,00 €

*Prix donné à titre indicatif

N° de stock RS:: 252-0265
Référence fabricant:: SIHK075N60EF-T1GE3
Fabricant:: Vishay

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	33A
	Maximum Drain Source Voltage Vds	650V
	Series	EF
	Package Type	PowerPAK 10 x 12
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.061Ω
	Channel Mode	Depletion
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	72nC
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	192W
	Maximum Operating Temperature	+150°C
	Length	6.15mm
	Width	5.15mm
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Sélectionner tout
	Marque Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 33A
	Maximum Drain Source Voltage Vds 650V
	Series EF
	Package Type PowerPAK 10 x 12
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.061Ω
	Channel Mode Depletion
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 72nC
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 192W
	Maximum Operating Temperature +150°C
	Length 6.15mm
	Width 5.15mm
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - SIHK075N60EF-T1GE3

Vishay Series EF Power MOSFET, 650V Maximum Drain Source Voltage, 33A Maximum Continuous Drain Current - SIHK075N60EF-T1GE3

This power MOSFET is a high-voltage switching device designed for demanding power-electronics and automotive environments. It operates as an N-channel depletion-mode transistor suited to high-voltage applications, offering a balance of current capability and thermal endurance for industrial control and vehicle electronic systems.

Features and Benefits:

• 650V rating enables high-voltage switching applications • 33A continuous drain current supports substantial load currents • 0.061Ω low Rds(on) reduces conduction losses • 192W power dissipation permits elevated power handling • 72nC typical gate charge allows predictable gate-drive sizing • 20V maximum gate-source voltage accommodates robust drive ranges

Applications

• Suitable for inverter and motor-drive stages in automation systems • Ideal for high-voltage DC-DC converters in electrified vehicles • Used for primary switches in power supplies for industrial equipment • Can be used for traction and auxiliary vehicle power electronics

What temperature range can it withstand during operation?

It is specified to operate from -55°C up to +150°C, permitting use across wide ambient and thermal conditions typical in automotive and industrial installations.

Which package type should designers account for on the board?

The device is supplied in an 8-pin PowerPAK 10x12 surface-mount package, so thermal pad layout and soldering profiles for that package should be applied.

What gate-drive constraints must be observed for reliable switching?

The maximum gate-source voltage is 20V

gate drivers should be designed to remain within that limit while providing sufficient slew to manage the 72nC gate charge.

Are there any approvals or environmental standards noted for this device?

It meets RoHS requirements and adheres to the AEC-Q101 automotive standard for component qualification.