Références fabricant

Infineon BSZ Type N, Type P-Channel MOSFET, 5.10 A, +20 V P, 8-Pin PQFN BSZ15DC02KDHXTMA1

N° de stock RS:: 250-0563
Référence fabricant:: BSZ15DC02KDHXTMA1
Fabricant:: Infineon

Infineon BSZ Type N, Type P-Channel MOSFET, 5.10 A, +20 V P, 8-Pin PQFN BSZ15DC02KDHXTMA1

Sous-total (1 bobine de 5000 unités)*

2 165,00 €

(TVA exclue)

2 620,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 01 juin 2027

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Unité	Prix par unité	la bobine*
5000 +	0,433 €	2 165,00 €

*Prix donné à titre indicatif

N° de stock RS:: 250-0563
Référence fabricant:: BSZ15DC02KDHXTMA1
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	MOSFET
	Channel Type	Type N, Type P
	Maximum Continuous Drain Current Id	5.10A
	Maximum Drain Source Voltage Vds	+20V
	Series	BSZ
	Package Type	PQFN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	150mΩ
	Channel Mode	P
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1V
	Maximum Power Dissipation Pd	81W
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Product Type MOSFET
	Channel Type Type N, Type P
	Maximum Continuous Drain Current Id 5.10A
	Maximum Drain Source Voltage Vds +20V
	Series BSZ
	Package Type PQFN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 150mΩ
	Channel Mode P
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1V
	Maximum Power Dissipation Pd 81W
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - BSZ15DC02KDHXTMA1

Infineon BSZ Series MOSFET, 20V Maximum Drain‑Source Voltage, 5.10A Maximum Continuous Drain Current - BSZ15DC02KDHXTMA1

This MOSFET is a dual‑channel semiconductor device designed for surface‑mount power switching in Compact electronics. It supports both N‑ and P‑channel operation, is supplied in an 8‑pin PQFN package, and is intended for applications requiring moderate current handling and controlled gate drive. The component conforms to RoHS and is specified for extended temperature environments.

Features and Benefits:

• 150mΩ Rds(on) reduces conduction losses during switching
• 80 nC typical gate charge enables predictable gate‑drive sizing
• 20V maximum Vds supports low‑voltage power rails
• 5.10A continuous drain current handles sustained load currents
• 81W power dissipation allows high transient energy handling

Applications

• Suitable for point‑of‑load switching regulators
• Ideal for synchronous buck converter stages
• Used with mixed‑signal power‑management circuits
• Can be used for battery protection and load switching
• Suitable for Compact surface‑mount power modules

What temperature range can it operate within?

It is rated for operation from -55°C up to 175°C.

What mounting and pin count does it require?

It is a surface‑mount component supplied in an 8‑pin PQFN package.

How does channel configuration affect circuit design?

Availability of both N‑channel and P‑channel types allows complementary topologies and simplified level shifting in bidirectional switches.

What gate‑drive considerations arise from the gate charge?

An 80 nC gate charge requires a gate driver sized for the intended switching speed to manage transition energy and switching losses.

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