Références fabricant

Infineon BSZ N-Channel MOSFET, 212 A, 40 V N, 8-Pin PQFN BSZ024N04LS6ATMA1

N° de stock RS:: 241-9703
Référence fabricant:: BSZ024N04LS6ATMA1
Fabricant:: Infineon

Infineon BSZ N-Channel MOSFET, 212 A, 40 V N, 8-Pin PQFN BSZ024N04LS6ATMA1

Offre groupée disponible

Consulter les options de prix de gros

Sous-total (1 paquet de 2 unités)*

2,95 €

(TVA exclue)

3,57 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

2 000 unité(s) expédiée(s) à partir du 22 juillet 2027

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Unité	Prix par unité	le paquet*
2 - 18	1,475 €	2,95 €
20 - 48	1,195 €	2,39 €
50 - 98	1,13 €	2,26 €
100 - 198	1,05 €	2,10 €
200 +	0,955 €	1,91 €

*Prix donné à titre indicatif

N° de stock RS:: 241-9703
Référence fabricant:: BSZ024N04LS6ATMA1
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	212A
	Maximum Drain Source Voltage Vds	40V
	Series	BSZ
	Package Type	PQFN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.7mΩ
	Channel Mode	N
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	81W
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1V
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 212A
	Maximum Drain Source Voltage Vds 40V
	Series BSZ
	Package Type PQFN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.7mΩ
	Channel Mode N
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 81W
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1V
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - BSZ024N04LS6ATMA1

Infineon BSZ Series MOSFET, 40V Maximum Drain Source Voltage, 212A Maximum Continuous Drain Current - BSZ024N04LS6ATMA1

This MOSFET is a silicon-based N-channel switching device designed for high-current power applications in surface-mount assemblies. It operates across an extended temperature range and is intended for use where low conduction losses and robust gate handling are required.

Features and Benefits:

• 0.7mΩ Rds(on) reduces conduction losses for high-efficiency operation
• 212A continuous drain current supports heavy current loads
• 40V drain-source rating enables low-voltage power stages
• 81W power dissipation manages thermal stress during high load
• 80nC typical gate charge balances switching speed and drive effort
• 20V gate-source limit provides defined gate protection margin

Applications

• Suitable for motor driver stages requiring high continuous current
• Ideal for DC-DC converter primary or synchronous stages
• Used with power electronics in industrial drive systems
• Can be used for high-current switching in battery management
• Appropriate for surface-mount assemblies needing Compact PQFN packages

What package type is used for thermal and PCB mounting?

It is supplied in a PQFN package optimised for surface mounting and heat transfer.

What environmental temperature range can it withstand during operation?

It functions across temperatures from −55°C up to 175°C for wide-range deployments.

How does the device handle gate drive requirements?

The gate requires drive compatible with an 80nC typical gate charge and must not exceed a 20V Vgs limit.

Is the device compliant with common electronic materials directives?

It conforms to RoHS requirements restricting certain hazardous substances.

How many electrical connections does the package present for PCB layout?

The device is supplied with an 8-pin configuration for routing and thermal land design.

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