STMicroelectronics N-Channel MOSFET, 30 A, 650 V, 7-Pin H2PAK-7 SCT040H65G3AG
- N° de stock RS:
- 249-6653
- Référence fabricant:
- SCT040H65G3AG
- Fabricant:
- STMicroelectronics
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 249-6653
- Référence fabricant:
- SCT040H65G3AG
- Fabricant:
- STMicroelectronics
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Documentation technique
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Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 30 A | |
| Maximum Drain Source Voltage (Vds) | 650 V | |
| Pin Count | 7 | |
| Package Type | H2PAK-7 | |
| Mount Type | Surface | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 30 A | ||
Maximum Drain Source Voltage (Vds) 650 V | ||
Pin Count 7 | ||
Package Type H2PAK-7 | ||
Mount Type Surface | ||
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency
Liens connexes
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