STMicroelectronics N-Channel STH65N Type N-Channel MOSFET, 51 A, 650 V Enhancement, 7-Pin H2PAK-7
- N° de stock RS:
- 481-129
- Référence fabricant:
- STH65N050DM9-7AG
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 unité)*
7,68 €
(TVA exclue)
9,29 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
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- 288 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 7,68 € |
| 10 - 49 | 6,22 € |
| 50 - 99 | 4,76 € |
| 100 + | 4,22 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 481-129
- Référence fabricant:
- STH65N050DM9-7AG
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 51A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | H2PAK-7 | |
| Series | STH65N | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | N-Channel | |
| Width | 24.3 mm | |
| Length | 15.25mm | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 51A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type H2PAK-7 | ||
Series STH65N | ||
Mount Type Surface | ||
Pin Count 7 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration N-Channel | ||
Width 24.3 mm | ||
Length 15.25mm | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- CN
The STMicroelectronics N-Channel Power MOSFET is built on Advanced super-junction MDmesh DM9 technology, designed for medium to high voltage applications. It features extremely low RDS(on) per area and a fast-recovery diode, making it Ideal for high-efficiency switching. The DM9 silicon technology utilizes a multi-drain manufacturing process that enhances device structure and performance. With very low recovery charge (Qrr), fast recovery time (trr), and low RDS(on), this MOSFET is optimized for demanding bridge topologies and ZVS phase-shift converters.
Low gate charge and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Excellent switching performance thanks to the extra driving source pin
AEC-Q101 qualified
Liens connexes
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