Infineon IPN Type N-Channel MOSFET, 6 A, 600 V, 3-Pin SOT-223
- N° de stock RS:
- 244-2270
- Référence fabricant:
- IPN60R600PFD7SATMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 3000 unités)*
693,00 €
(TVA exclue)
840,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 23 octobre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 0,231 € | 693,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 244-2270
- Référence fabricant:
- IPN60R600PFD7SATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | SOT-223 | |
| Series | IPN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type SOT-223 | ||
Series IPN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon 600V CoolMOS™ PFD7 superjunction MOSFET (IPN60R2K0PFD7S) complements the CoolMOS™ 7 offering for consumer applications.This product family is tailored to ultrahigh power density as well as highest efficiency designs.
Extremely low losses due to very low FOM RDS(on)*Qg and RDS(on)*Eoss
Low switching losses Eoss, excellent thermal behavior
Fast body diode
Wide range portfolio of RDS(on) and package variations
Enables high power density designs and small form factors
Enables efficiency gains at higher switching frequencies
Excellent commutation ruggedness
Easy to select the right parts and optimize the design
Liens connexes
- Infineon IPN Type N-Channel MOSFET 600 V, 3-Pin SOT-223 IPN60R600PFD7SATMA1
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- Infineon IPN Type N-Channel MOSFET 75 V, 3-Pin SOT-223
- Infineon IPN Type N-Channel MOSFET 950 V, 3-Pin SOT-223
- Infineon IPN Type N-Channel MOSFET 650 V, 3-Pin SOT-223
- Infineon IPN Type N-Channel MOSFET 650 V, 3-Pin SOT-223
- Infineon IPN Type N-Channel MOSFET 650 V, 3-Pin SOT-223 IPN60R360PFD7SATMA1