Infineon IPN N-Channel MOSFET, 6.1 A, 950 V, 3-Pin SOT-223 IPN95R3K7P7ATMA1
- N° de stock RS:
- 244-2272
- Référence fabricant:
- IPN95R3K7P7ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 bobine de 3000 unités)*
933,00 €
(TVA exclue)
1 128,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 03 mai 2027
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 - 3000 | 0,311 € | 933,00 € |
| 6000 + | 0,296 € | 888,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 244-2272
- Référence fabricant:
- IPN95R3K7P7ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.1A | |
| Maximum Drain Source Voltage Vds | 950V | |
| Series | IPN | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 900mV | |
| Maximum Power Dissipation Pd | 81W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | +150°C | |
| Length | 2mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.1A | ||
Maximum Drain Source Voltage Vds 950V | ||
Series IPN | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 900mV | ||
Maximum Power Dissipation Pd 81W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature +150°C | ||
Length 2mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon IPN Series MOSFET, 950V Drain Source Voltage, 81W Power Dissipation - IPN95R3K7P7ATMA1
This MOSFET is a high-voltage N-channel switching device designed for surface-mount applications where robust drain-source performance and wide temperature tolerance are required. It operates across a broad thermal range and is suitable for circuits demanding substantial power handling and gate-drive tolerance in Compact SOT-223 packaging.
Features and Benefits:
• 950V drain-source capability enabling high-voltage switching
• 3mΩ low on-resistance reducing conduction losses
• 6.1A continuous current supporting moderate load currents
• 81W power dissipation allowing sustained thermal performance
• 80nC typical gate charge facilitating predictable switching behaviour
• 20V gate tolerance permitting common gate-drive voltages
• 3mΩ low on-resistance reducing conduction losses
• 6.1A continuous current supporting moderate load currents
• 81W power dissipation allowing sustained thermal performance
• 80nC typical gate charge facilitating predictable switching behaviour
• 20V gate tolerance permitting common gate-drive voltages
Applications
• Suitable for high-voltage power conversion stages
• Ideal for industrial motor drive front-ends
• Used for switch-mode power supply primary switching
• Can be used for automotive power systems requiring qualification
• Used with Compact surface-mount assemblies on heat-managed boards
• Ideal for industrial motor drive front-ends
• Used for switch-mode power supply primary switching
• Can be used for automotive power systems requiring qualification
• Used with Compact surface-mount assemblies on heat-managed boards
What thermal extremes can it withstand in operation?
It is rated to operate from -55°C up to +150°C.
How many pins does the package present for PCB layout?
The device uses a three-pin configuration in SOT-223 format.
What forward conduction characteristic is relevant for low-voltage drop?
The typical forward voltage is 0.9V during conduction.
Is the device suitable for automotive qualification standards?
It meets AEC-Q101 requirements for automotive-grade use.
What environmental compliance is indicated for disposal and use?
It is RoHS-compliant.
Liens connexes
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