Infineon IPN N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin SOT-223 IPN60R360P7SATMA1

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Sous-total (1 paquet de 20 unités)*

16,26 €

(TVA exclue)

19,68 €

(TVA incluse)

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  • Plus 2 680 unité(s) expédiée(s) à partir du 12 octobre 2026
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Unité
Prix par unité
le paquet*
20 - 800,813 €16,26 €
100 - 1800,651 €13,02 €
200 - 4800,61 €12,20 €
500 - 9800,57 €11,40 €
1000 +0,529 €10,58 €

*Prix donné à titre indicatif

Options de conditionnement :
N° de stock RS:
217-2543
Référence fabricant:
IPN60R360P7SATMA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

600V

Series

IPN

Package Type

SOT-223

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

360mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

111W

Forward Voltage Vf

900mV

Typical Gate Charge Qg @ Vgs

36nC

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

150°C

Height

1.1mm

Width

8.8mm

Length

8.8mm

Standards/Approvals

No

Automotive Standard

No

Infineon IPN Series MOSFET, 600V Maximum Drain Source Voltage, 111W Maximum Power Dissipation - IPN60R360P7SATMA1


This MOSFET is a high-voltage N-channel switch intended for surface-mounted power applications, offering enhancement‑mode operation for controlled conduction in electronic circuits. It is designed to operate across an extended ambient range and interfaces via three pins in a Compact SOT-223 package suited to board‑level assembly.

Features and Benefits:


• 600 V drain tolerance enables operation in high-voltage systems
• 9 A continuous drain current supports moderate power loads
• 360 mΩ Rds(on) minimises conduction losses at rated conditions
• 111 W power dissipation allows sustained thermal handling
• 36 nC typical gate charge facilitates predictable switching behaviour

Applications


• Suitable for high-voltage power switching designs
• Ideal for DC-DC converter output stages
• Used with power supplies requiring surface-mount components
• Can be used for motor driver switches in control circuits
• Suitable for line‑level power management in industrial equipment

What gate voltage limits must be observed during operation?


The gate must not exceed a Peak of 20 V relative to source to avoid overstress.

What thermal range can the device withstand in service?


It is specified for operation from −40 °C to 150 °C to cover low-temperature start‑up and elevated operating conditions.

How many electrical connections does it provide for PCB mounting?


It provides three electrical pins and is supplied in an SOT-223 surface‑mount format.

What is the typical forward drop when conducting in the forward diode path?


The forward voltage is specified at 0.9 V under the datasheet test conditions.

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