Infineon IPN N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin SOT-223 IPN60R360P7SATMA1

N° de stock RS:: 217-2542
Référence fabricant:: IPN60R360P7SATMA1
Fabricant:: Infineon

Infineon IPN N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin SOT-223 IPN60R360P7SATMA1

Sous-total (1 bobine de 3000 unités)*

927,00 €

(TVA exclue)

1 122,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 07 décembre 2026

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Unité	Prix par unité	la bobine*
3000 +	0,309 €	927,00 €

*Prix donné à titre indicatif

N° de stock RS:: 217-2542
Référence fabricant:: IPN60R360P7SATMA1
Fabricant:: Infineon

Spécifications

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Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	9A
	Maximum Drain Source Voltage Vds	600V
	Package Type	SOT-223
	Series	IPN
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	360mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-40°C
	Typical Gate Charge Qg @ Vgs	36nC
	Maximum Power Dissipation Pd	111W
	Forward Voltage Vf	900mV
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	150°C
	Width	8.8mm
	Length	8.8mm
	Standards/Approvals	No
	Height	1.1mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 9A
	Maximum Drain Source Voltage Vds 600V
	Package Type SOT-223
	Series IPN
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 360mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -40°C
	Typical Gate Charge Qg @ Vgs 36nC
	Maximum Power Dissipation Pd 111W
	Forward Voltage Vf 900mV
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 150°C
	Width 8.8mm
	Length 8.8mm
	Standards/Approvals No
	Height 1.1mm
	Automotive Standard No

Datasheet - IPN60R360P7SATMA1

Infineon IPN Series MOSFET, 600V Maximum Drain Source Voltage, 111W Maximum Power Dissipation - IPN60R360P7SATMA1

This MOSFET is a high-voltage N-channel switch intended for surface-mounted power applications, offering enhancement‑mode operation for controlled conduction in electronic circuits. It is designed to operate across an extended ambient range and interfaces via three pins in a Compact SOT-223 package suited to board‑level assembly.

Features and Benefits:

• 600 V drain tolerance enables operation in high-voltage systems
• 9 A continuous drain current supports moderate power loads
• 360 mΩ Rds(on) minimises conduction losses at rated conditions
• 111 W power dissipation allows sustained thermal handling
• 36 nC typical gate charge facilitates predictable switching behaviour

Applications

• Suitable for high-voltage power switching designs
• Ideal for DC-DC converter output stages
• Used with power supplies requiring surface-mount components
• Can be used for motor driver switches in control circuits
• Suitable for line‑level power management in industrial equipment

What gate voltage limits must be observed during operation?

The gate must not exceed a Peak of 20 V relative to source to avoid overstress.

What thermal range can the device withstand in service?

It is specified for operation from −40 °C to 150 °C to cover low-temperature start‑up and elevated operating conditions.

How many electrical connections does it provide for PCB mounting?

It provides three electrical pins and is supplied in an SOT-223 surface‑mount format.

What is the typical forward drop when conducting in the forward diode path?

The forward voltage is specified at 0.9 V under the datasheet test conditions.