Vishay SISA10BDN N-Channel MOSFET, 104 A, 30 V, 8-Pin PowerPAK 1212-8PT SISA10BDN-T1-GE3

N° de stock RS:: 239-5398
Référence fabricant:: SISA10BDN-T1-GE3
Fabricant:: Vishay

Vishay SISA10BDN N-Channel MOSFET, 104 A, 30 V, 8-Pin PowerPAK 1212-8PT SISA10BDN-T1-GE3

Sous-total (1 paquet de 10 unités)*

6,75 €

(TVA exclue)

8,17 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

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Plus 6 030 unité(s) expédiée(s) à partir du 08 octobre 2026

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Unité	Prix par unité	le paquet*
10 +	0,675 €	6,75 €

*Prix donné à titre indicatif

N° de stock RS:: 239-5398
Référence fabricant:: SISA10BDN-T1-GE3
Fabricant:: Vishay

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	104A
	Maximum Drain Source Voltage Vds	30V
	Package Type	PowerPAK 1212-8PT
	Series	SISA10BDN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.0036Ω
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1.1V
	Maximum Power Dissipation Pd	63W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	11.7nC
	Maximum Operating Temperature	150°C
	Length	3.3mm
	Width	3.3mm
	Standards/Approvals	RoHS
	Height	0.75mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 104A
	Maximum Drain Source Voltage Vds 30V
	Package Type PowerPAK 1212-8PT
	Series SISA10BDN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.0036Ω
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1.1V
	Maximum Power Dissipation Pd 63W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 11.7nC
	Maximum Operating Temperature 150°C
	Length 3.3mm
	Width 3.3mm
	Standards/Approvals RoHS
	Height 0.75mm
	Automotive Standard No

Vishay SISA10BDN Series MOSFET, 30V Maximum Drain Source Voltage, 104A Maximum Continuous Drain Current - SISA10BDN-T1-GE3

This n-channel MOSFET is a surface-mount power transistor designed for high-current switching in compact electronic assemblies. It operates across a wide temperature range and is suitable for demanding thermal environments where efficient conduction and fast gate response are required. The device is offered in a low-profile package optimised for assembly onto densely populated boards.

Features and Benefits:

• Very low on-resistance 0.0036Ω enables reduced conduction losses
• High continuous drain current 104A supports heavy-load switching
• Drain-source voltage rating 30V allows low-voltage power designs
• Typical gate charge 11.7nC yields quicker gate drive transitions
• Maximum power dissipation 63W permits sustained thermal load handling
• Gate-source withstand 20V provides headroom for diverse drive voltages

Applications

• Suitable for synchronous buck regulator switching stages
• Ideal for motor driver half-bridges in compact inverters
• Used with high-current load switches in server power rails
• Can be used for battery management in high-drain systems
• Suitable for solid-state relays and automotive-style power modules

What mounting method is required for reliable assembly?

It is a surface-mount component in a PowerPAK 1212-8PT format, intended for reflow soldering to a PCB footprint designed for thermal and electrical contact.

How does ambient temperature affect operating capability?

The device is specified to function from -55°C up to 150°C, permitting operation in both sub-zero and elevated-temperature environments with appropriate thermal management.

What type of conduction channel does it use?

It employs an N-type channel, which is suitable for low-voltage, high-current switching applications.

Is the device compliant with environmental restrictions?

It meets RoHS requirements, indicating it lacks restricted hazardous substances under the standard.