Vishay SISA10BDN Type N-Channel MOSFET, 104 A, 30 V, 8-Pin PowerPAK 1212-8PT SISA10BDN-T1-GE3

N° de stock RS:: 239-5397
Référence fabricant:: SISA10BDN-T1-GE3
Fabricant:: Vishay

Vishay SISA10BDN Type N-Channel MOSFET, 104 A, 30 V, 8-Pin PowerPAK 1212-8PT SISA10BDN-T1-GE3

Sous-total (1 bobine de 3000 unités)*

1 128,00 €

(TVA exclue)

1 365,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

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Unité	Prix par unité	la bobine*
3000 +	0,376 €	1 128,00 €

*Prix donné à titre indicatif

N° de stock RS:: 239-5397
Référence fabricant:: SISA10BDN-T1-GE3
Fabricant:: Vishay

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	104A
	Maximum Drain Source Voltage Vds	30V
	Package Type	PowerPAK 1212-8PT
	Series	SISA10BDN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.0036Ω
	Typical Gate Charge Qg @ Vgs	11.7nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.1V
	Maximum Power Dissipation Pd	63W
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	150°C
	Height	0.75mm
	Width	3.3mm
	Length	3.3mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 104A
	Maximum Drain Source Voltage Vds 30V
	Package Type PowerPAK 1212-8PT
	Series SISA10BDN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.0036Ω
	Typical Gate Charge Qg @ Vgs 11.7nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.1V
	Maximum Power Dissipation Pd 63W
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 150°C
	Height 0.75mm
	Width 3.3mm
	Length 3.3mm
	Standards/Approvals RoHS
	Automotive Standard No

Vishay SISA10BDN Series MOSFET, 30V Maximum Drain Source Voltage, 104A Maximum Continuous Drain Current - SISA10BDN-T1-GE3

This MOSFET is a surface-mount N-channel power transistor designed for high-current switching in Compact electronic assemblies. It operates across a wide temperature range and suits applications demanding substantial continuous drain current and efficient conduction at low voltage. The device integrates a low on-resistance and modest gate charge to balance switching performance and thermal handling in densely packaged systems.

Features and Benefits:

• 104A continuous drain current enables high-current switching capability
• 30V drain-source rating supports low-voltage power rails
• 0.0036Ω Rds(on) reduces conduction losses and heat generation
• 11.7nC gate charge allows efficient gate drive and switching control
• 63W power dissipation accommodates significant thermal load
• 20V maximum gate-source voltage protects gate from overdrive

Applications

• Suitable for motor driver stages in automation equipment
• Ideal for high-current DC-DC converter outputs
• Used for synchronous rectification in power supplies
• Can be used for load switching in industrial controllers
• Used with Compact power modules requiring SMD mounting

What temperature extremes can the device withstand during operation?

It is rated to operate from -55°C up to 150°C, allowing use in challenging thermal environments.

Which package type should designers allow footprint space for?

The component is supplied in a PowerPAK 1212-8PT surface-mount package requiring an 8-pin SMD footprint.

How does the component perform under high-power conditions thermally?

Maximum power dissipation is 63W, indicating the device can handle substantial power when mounted with appropriate PCB thermal management.

Is it suitable where automotive qualification is mandatory?

The device is not specified as meeting automotive standard approvals, so it should not be assumed to replace automotive-qualified parts.

What gate drive considerations are necessary to avoid damage?

Gate drive amplitude must not exceed 20V to remain within the maximum gate-source voltage rating.