Vishay E N-Channel Power MOSFET, 47 A, 700 V Enhancement, 3-Pin TO-247AD SQW44N65EF-GE3
- N° de stock RS:
- 228-2977
- Référence fabricant:
- SQW44N65EF-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
7,85 €
(TVA exclue)
9,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 7,85 € |
| 10 - 24 | 7,38 € |
| 25 - 49 | 6,66 € |
| 50 - 99 | 6,29 € |
| 100 + | 5,89 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 228-2977
- Référence fabricant:
- SQW44N65EF-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 47A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-247AD | |
| Series | E | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 73mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 500W | |
| Typical Gate Charge Qg @ Vgs | 177nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 47A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-247AD | ||
Series E | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 73mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 500W | ||
Typical Gate Charge Qg @ Vgs 177nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Vishay Series E Power MOSFET, 700V Drain Source Voltage, 47A Continuous Drain Current - SQW44N65EF-GE3
This power MOSFET is a high-voltage switching transistor designed for demanding electronic applications requiring substantial current handling and elevated temperature endurance. It is an N‑channel enhancement device supplied in a through-hole TO-247AD package and suited to power conversion, motor drives and industrial switching environments where compact, mountable components are needed.
Features and Benefits:
• 700V drain rating enables high-voltage system designs
• 47A continuous drain current supports heavy-load switching
• 73mΩ Rds(on) minimises conduction losses under load
• 177nC typical gate charge reduces switching losses
• 500W maximum power dissipation handles elevated thermal load
• -55 to 175°C operating range sustains wide temperature extremes
• 47A continuous drain current supports heavy-load switching
• 73mΩ Rds(on) minimises conduction losses under load
• 177nC typical gate charge reduces switching losses
• 500W maximum power dissipation handles elevated thermal load
• -55 to 175°C operating range sustains wide temperature extremes
Applications
• Suitable for high-voltage power supplies and inverters
• Ideal for traction or industrial motor drive stages
• Used for hard-switching and soft-switching topologies
• Can be used for renewable energy converter electronics
• Appropriate for automotive electronic modules requiring AEC‑Q101
• Ideal for traction or industrial motor drive stages
• Used for hard-switching and soft-switching topologies
• Can be used for renewable energy converter electronics
• Appropriate for automotive electronic modules requiring AEC‑Q101
What mounting considerations apply to this component?
The device uses a through-hole mount in a TO-247AD package, allowing direct heatsinking with a suitable insulated or bare tab and conventional screw mounting for thermal management.
How does gate handling affect switching performance?
With a typical gate charge of 177nC, gate-driver selection must provide sufficient peak current to achieve the required dv/dt and minimise transition losses.
What thermal stresses can it tolerate during operation?
The transistor is specified to operate between -55°C and 175°C, so PCB layout and cooling must be designed to keep junction temperature within that range under rated dissipation.
Are there any automotive considerations for usage?
It meets AEC‑Q101 qualification, making it suitable for automotive electronic systems where the specified qualification is required.
Liens connexes
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