Vishay E Type N-Channel Power MOSFET, 34 A, 700 V Enhancement, 3-Pin TO-247AD SQW33N65EF-GE3
- N° de stock RS:
- 228-2975
- Référence fabricant:
- SQW33N65EF-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
13,56 €
(TVA exclue)
16,40 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 328 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 6,78 € | 13,56 € |
| 20 - 48 | 5,765 € | 11,53 € |
| 50 - 98 | 5,22 € | 10,44 € |
| 100 - 198 | 4,205 € | 8,41 € |
| 200 + | 3,66 € | 7,32 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 228-2975
- Référence fabricant:
- SQW33N65EF-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 34A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | E | |
| Package Type | TO-247AD | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 109mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 375W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 115nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 34A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series E | ||
Package Type TO-247AD | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 109mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 375W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 115nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Vishay Series E Power MOSFET, 700V Drain Source Voltage, 34A Maximum Continuous Drain Current - SQW33N65EF-GE3
This power MOSFET is a high-voltage, N-channel transistor designed for switching and power-conversion tasks in industrial and automotive contexts. It is supplied in a through-hole TO-247AD package for robust mounting and thermal handling, and it operates across a wide ambient temperature range suited to demanding environments.
Features and Benefits:
• 700V drain rating enables high-voltage switching applications • 34 A continuous drain current supports substantial load currents • 109 mΩ Rds(on) reduces conduction losses in power stages • 115 nC typical gate charge for predictable switching behaviour • 30V gate tolerance allows compatibility with common gate drivers • 375W power dissipation aids thermal margin under high load
Applications
• Suitable for motor-drive stages requiring high-voltage switching • Ideal for DC-DC converters in industrial power supplies • Used for automotive power modules meeting AEC-Q101 requirements • Can be used for high-voltage inverter and UPS circuits
What ambient temperatures can it tolerate during operation?
It can operate from -55°C up to 175°C, allowing use in harsh thermal environments.
How does package choice affect cooling and mounting?
The TO-247AD through-hole format provides a large metal tab for heatsinking and secure board attachment for high-power assemblies.
What performance should be expected during switching events?
Typical gate charge is 115 nC at the specified gate drive, which informs gate-driver sizing and switching-loss calculations.
Is this device suitable for use in safety-conscious automotive electronics?
It conforms to AEC-Q101 automotive standards and is intended for automotive-grade applications where such qualification is required.
Liens connexes
- Vishay E Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-247
- Vishay E Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-247 SQW44N65EF-GE3
- Vishay E Type N 85 A 3-Pin Super-247 SiHS90N65E-GE3
- Vishay E Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-247
- Vishay E Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-247 SIHG20N50E-GE3
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-247 SIHG17N80AE-GE3
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-247 SIHG15N80AE-GE3
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-247 SIHG11N80AE-GE3