Name: Vishay E Type N-Channel Power MOSFET, 34 A, 700 V Enhancement, 3-Pin TO-247AD
Brand: Vishay
SKU: 228-2974
Price: 5.81 EUR
Availability: InStock

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	34A
	Maximum Drain Source Voltage Vds	700V
	Package Type	TO-247AD
	Series	E
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	109mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	115nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	375W
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Sélectionner tout
	Marque Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 34A
	Maximum Drain Source Voltage Vds 700V
	Package Type TO-247AD
	Series E
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 109mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 115nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 375W
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Vishay Series E Power MOSFET, 700V Drain Source Voltage, 34A Maximum Continuous Drain Current - SQW33N65EF-GE3

This power MOSFET is a high-voltage, N-channel transistor designed for switching and power-conversion tasks in industrial and automotive contexts. It is supplied in a through-hole TO-247AD package for robust mounting and thermal handling, and it operates across a wide ambient temperature range suited to demanding environments.

Features and Benefits:

• 700V drain rating enables high-voltage switching applications • 34 A continuous drain current supports substantial load currents • 109 mΩ Rds(on) reduces conduction losses in power stages • 115 nC typical gate charge for predictable switching behaviour • 30V gate tolerance allows compatibility with common gate drivers • 375W power dissipation aids thermal margin under high load

Applications

• Suitable for motor-drive stages requiring high-voltage switching • Ideal for DC-DC converters in industrial power supplies • Used for automotive power modules meeting AEC-Q101 requirements • Can be used for high-voltage inverter and UPS circuits

What ambient temperatures can it tolerate during operation?

It can operate from -55°C up to 175°C, allowing use in harsh thermal environments.

How does package choice affect cooling and mounting?

The TO-247AD through-hole format provides a large metal tab for heatsinking and secure board attachment for high-power assemblies.

What performance should be expected during switching events?

Typical gate charge is 115 nC at the specified gate drive, which informs gate-driver sizing and switching-loss calculations.

Is this device suitable for use in safety-conscious automotive electronics?

It conforms to AEC-Q101 automotive standards and is intended for automotive-grade applications where such qualification is required.

144,15 €

(TVA exclue)

4,805 €/unité

Vishay E Type N-Channel Power MOSFET, 34 A, 700 V Enhancement, 3-Pin TO-247AD

Frais de livraison offerts pour toute commande de plus de 90,00 €