Vishay E Type N-Channel Power MOSFET, 8 A, 850 V Enhancement, 3-Pin TO-252 SIHD11N80AE-T1-GE3
- N° de stock RS:
- 228-2849
- Référence fabricant:
- SIHD11N80AE-T1-GE3
- Fabricant:
- Vishay
Sous-total (1 paquet de 5 unités)*
11,40 €
(TVA exclue)
13,80 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- 1 995 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 + | 2,28 € | 11,40 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 228-2849
- Référence fabricant:
- SIHD11N80AE-T1-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 850V | |
| Series | E | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 450mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 78W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 850V | ||
Series E | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 450mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 78W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 850V Maximum Drain Source Voltage, 8A Maximum Continuous Drain Current - SIHD11N80AE-T1-GE3
This power MOSFET is a high-voltage N-channel switching transistor intended for surface-mount applications in industrial power designs. It operates as an enhancement-mode device and is suited to circuits requiring high drain-to-source voltage capability and moderate continuous current handling within elevated temperature environments.
Features and Benefits:
• 850V maximum drain-to-source voltage enables high-voltage switching applications • 8A continuous drain current supports moderate load-driving requirements • 450mΩ Rds(on) reduces conduction losses in high-voltage circuits • 78W maximum power dissipation permits higher thermal headroom • 30V gate tolerance allows robust gate-drive margins • 28nC typical gate charge aids predictable switching performance
Applications
• Suitable for high-voltage power supplies and converters • Ideal for industrial motor-drive front-ends • Used for electronic ballast and lighting controllers • Can be used for energy-management and power-conditioning modules • Suitable for mid-power inverter stages in automation systems
What mounting format does it use for PCB assembly?
It is supplied in a TO-252 surface-mount package with three pins for PCB soldering.
What temperature range can it withstand during operation?
It is specified for operation from -55°C up to a maximum of 150°C.
How does its gate characteristic affect switching design?
The typical gate charge of 28nC at the rated gate drive informs drive current and switching-loss estimates for gate driver selection.
What is the maximum continuous power the device can dissipate?
The device can dissipate up to 78W under appropriate thermal-management conditions.
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