Vishay E Type N-Channel Power MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-252 SIHD11N80AE-GE3

N° de stock RS:: 210-4978
Référence fabricant:: SIHD11N80AE-GE3
Fabricant:: Vishay

Vishay E Type N-Channel Power MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-252 SIHD11N80AE-GE3

Sous-total (1 bobine de 3000 unités)*

2 271,00 €

(TVA exclue)

2 748,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 18 janvier 2027

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Unité	Prix par unité	la bobine*
3000 +	0,757 €	2 271,00 €

*Prix donné à titre indicatif

N° de stock RS:: 210-4978
Référence fabricant:: SIHD11N80AE-GE3
Fabricant:: Vishay

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	8A
	Maximum Drain Source Voltage Vds	800V
	Package Type	TO-252
	Series	E
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	391mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	78W
	Typical Gate Charge Qg @ Vgs	28nC
	Maximum Gate Source Voltage Vgs	30V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Length	9.4mm
	Standards/Approvals	RoHS
	Height	2.2mm
	Width	6.4mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 8A
	Maximum Drain Source Voltage Vds 800V
	Package Type TO-252
	Series E
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 391mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 78W
	Typical Gate Charge Qg @ Vgs 28nC
	Maximum Gate Source Voltage Vgs 30V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Length 9.4mm
	Standards/Approvals RoHS
	Height 2.2mm
	Width 6.4mm
	Automotive Standard No

Datasheet - SIHD11N80AE-GE3

Vishay Series E Power MOSFET, 800V Drain Source Voltage, 78W Power Dissipation - SIHD11N80AE-GE3

This power MOSFET is a high-voltage N-channel switching transistor designed for surface-mount power conversion and switching applications. It operates across a very wide temperature span and is intended for demanding environments where high drain-source voltage handling and moderate current capability are required, while conforming to RoHS restrictions.

Features and Benefits:

• 800V drain-source rating enables high-voltage topologies
• 8A continuous drain current supports moderate power circuits
• 391mΩ Rds(on) reduces conduction losses at rated current
• 78W maximum power dissipation allows substantial heat handling
• 28nC typical gate charge gives predictable switching energy
• 30V gate threshold accommodates standard gate-drive voltages

Applications

• Suitable for high-voltage switch-mode power supplies
• Ideal for half-bridge and boost converter stages
• Used with industrial motor-drive front-ends
• Can be used for offline charger and lighting control
• Appropriate for telecoms and power-distribution modules

What package and mounting style does it use?

It is supplied in a TO-252 package intended for surface-mount assembly to ease thermal coupling to PCB copper.

What thermal range can it withstand during operation?

It is rated to operate from -55°C up to 150°C, enabling use in harsh temperature conditions.

How does the forward voltage affect power-loss calculations?

A forward voltage of 1.2V should be included when estimating conduction and switching losses in diode-conducting intervals and synchronous arrangements.

What gate-drive limitations must be observed?

The maximum gate-source voltage is 30V, so gate drivers and protection must prevent excursions beyond this value.