Vishay E Type N-Channel Power MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-252

Sous-total (1 bobine de 3000 unités)*

2 271,00 €

(TVA exclue)

2 748,00 €

(TVA incluse)

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  • Expédition à partir du 04 décembre 2026
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Prix par unité
la bobine*
3000 +0,757 €2 271,00 €

*Prix donné à titre indicatif

N° de stock RS:
210-4978
Référence fabricant:
SIHD11N80AE-GE3
Fabricant:
Vishay
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Marque

Vishay

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

800V

Series

E

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

391mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

78W

Typical Gate Charge Qg @ Vgs

28nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Height

2.2mm

Length

9.4mm

Width

6.4mm

Standards/Approvals

RoHS

Automotive Standard

No

Vishay Series E Power MOSFET, 800V Drain Source Voltage, 8A Continuous Drain Current - SIHD11N80AE-GE3


This power MOSFET is a high-voltage N-channel enhancement-mode transistor intended for switching and power conversion in industrial electronic systems. It is supplied in a surface-mount TO-252 package and is designed to operate across a wide temperature range suitable for demanding environments. Key electrical limits and thermal handling allow use in circuits requiring elevated voltage tolerance and moderate continuous current capability.

Features and Benefits:


• 800V drain rating enables high-voltage switching applications • 8A continuous drain current supports steady-state load handling • 391mΩ Rds(on) reduces conduction losses for efficiency gains • 28nC typical gate charge minimises switching energy consumption • 78W power dissipation capability aids thermal margin in assemblies

Applications


• Suitable for primary-side switching in SMPS for industrial equipment • Ideal for high-voltage DC-DC conversion stages in power supplies • Used for inverter front-end switching in industrial motor drives • Can be used for snubber or clamp circuits in high-voltage systems

What gate drive considerations are required for reliable switching?


The device can tolerate gate voltages up to 30V, so gate drivers should provide appropriate Vgs levels while limiting transients to prevent overstress.

How does temperature affect allowable operation?


The component is rated to operate from -55°C up to 150°C

designers should account for derating of current and thermal resistance in elevated temperature conditions.

What package and mounting style does it use for PCB design?


It is supplied in a TO-252 surface-mount package with three pins, allowing soldered attachment to board copper and use of PCB thermal land patterns for heat dissipation.

What switching performance trade-offs should be expected?


Its moderate gate charge of 28nC balances switching speed and drive energy, while the relatively high Rds(on) implies higher conduction losses compared with low-resistance devices, which should be considered for efficiency budgets.

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