Vishay E Type N-Channel Power MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-252

N° de stock RS:: 210-4978
Référence fabricant:: SIHD11N80AE-GE3
Fabricant:: Vishay

Vishay E Type N-Channel Power MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-252

Sous-total (1 bobine de 3000 unités)*

2 271,00 €

(TVA exclue)

2 748,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 04 décembre 2026

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Unité	Prix par unité	la bobine*
3000 +	0,757 €	2 271,00 €

*Prix donné à titre indicatif

N° de stock RS:: 210-4978
Référence fabricant:: SIHD11N80AE-GE3
Fabricant:: Vishay

Spécifications

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Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	8A
	Maximum Drain Source Voltage Vds	800V
	Series	E
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	391mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	78W
	Typical Gate Charge Qg @ Vgs	28nC
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Height	2.2mm
	Length	9.4mm
	Width	6.4mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 8A
	Maximum Drain Source Voltage Vds 800V
	Series E
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 391mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 78W
	Typical Gate Charge Qg @ Vgs 28nC
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Height 2.2mm
	Length 9.4mm
	Width 6.4mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHD11N80AE-GE3

Vishay Series E Power MOSFET, 800V Drain Source Voltage, 8A Continuous Drain Current - SIHD11N80AE-GE3

This power MOSFET is a high-voltage N-channel enhancement-mode transistor intended for switching and power conversion in industrial electronic systems. It is supplied in a surface-mount TO-252 package and is designed to operate across a wide temperature range suitable for demanding environments. Key electrical limits and thermal handling allow use in circuits requiring elevated voltage tolerance and moderate continuous current capability.

Features and Benefits:

• 800V drain rating enables high-voltage switching applications • 8A continuous drain current supports steady-state load handling • 391mΩ Rds(on) reduces conduction losses for efficiency gains • 28nC typical gate charge minimises switching energy consumption • 78W power dissipation capability aids thermal margin in assemblies

Applications

• Suitable for primary-side switching in SMPS for industrial equipment • Ideal for high-voltage DC-DC conversion stages in power supplies • Used for inverter front-end switching in industrial motor drives • Can be used for snubber or clamp circuits in high-voltage systems

What gate drive considerations are required for reliable switching?

The device can tolerate gate voltages up to 30V, so gate drivers should provide appropriate Vgs levels while limiting transients to prevent overstress.

How does temperature affect allowable operation?

The component is rated to operate from -55°C up to 150°C

designers should account for derating of current and thermal resistance in elevated temperature conditions.

What package and mounting style does it use for PCB design?

It is supplied in a TO-252 surface-mount package with three pins, allowing soldered attachment to board copper and use of PCB thermal land patterns for heat dissipation.

What switching performance trade-offs should be expected?

Its moderate gate charge of 28nC balances switching speed and drive energy, while the relatively high Rds(on) implies higher conduction losses compared with low-resistance devices, which should be considered for efficiency budgets.