Vishay E Type N-Channel Power MOSFET, 8 A, 850 V Enhancement, 3-Pin TO-252 SIHD11N80AE-T1-GE3

N° de stock RS:: 228-2848
Référence fabricant:: SIHD11N80AE-T1-GE3
Fabricant:: Vishay

Vishay E Type N-Channel Power MOSFET, 8 A, 850 V Enhancement, 3-Pin TO-252 SIHD11N80AE-T1-GE3

Sous-total (1 bobine de 2000 unités)*

1 374,00 €

(TVA exclue)

1 662,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 15 janvier 2027

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Unité	Prix par unité	la bobine*
2000 +	0,687 €	1 374,00 €

*Prix donné à titre indicatif

N° de stock RS:: 228-2848
Référence fabricant:: SIHD11N80AE-T1-GE3
Fabricant:: Vishay

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	8A
	Maximum Drain Source Voltage Vds	850V
	Series	E
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	450mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	28nC
	Maximum Power Dissipation Pd	78W
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	30V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 8A
	Maximum Drain Source Voltage Vds 850V
	Series E
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 450mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 28nC
	Maximum Power Dissipation Pd 78W
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 30V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHD11N80AE-T1-GE3

Vishay Series E Power MOSFET, 850V Maximum Drain Source Voltage, 8A Maximum Continuous Drain Current - SIHD11N80AE-T1-GE3

This power MOSFET is a high-voltage N-channel enhancement device designed for power-switching duties in surface-mounted applications. It operates across an extended ambient range and is suited to circuits requiring elevated drain-source voltage capability and modest continuous current handling. The device is supplied in a TO-252 package and complies with RoHS.

Features and Benefits:

• 850V drain-source rating enables high-voltage switching
• 8A continuous drain current supports moderate load currents
• 450mΩ Rds(on) reduces conduction losses under load
• 78W maximum power dissipation handles significant thermal stress
• 28nC total gate charge allows faster gate transitions
• 1.2V forward diode drop minimises reverse conduction losses

Applications

• Used for high-voltage switching converters and inverters
• Suitable for industrial power supplies and auxiliary rails
• Ideal for half‑bridge and switch‑mode topologies
• Can be used for motor-drive gate stages with modest current
• Used with discrete power-management boards in consumer equipment

What gate‑drive voltage range should I design for?

The device tolerates up to 30V between gate and source

design gate drivers within this limit and select drive voltages appropriate for switching speed and safe margins.

How does temperature affect device operation?

Rated for operation from -55°C to 150°C, thermal performance will dictate permissible duty cycles and may require heatsinking or PCB thermal vias to maintain junction temperatures under high dissipation.

What mounting and layout considerations are important?

As a TO-252 surface‑mount package, ensure adequate copper area for heat spreading and short, low‑inductance tracks for drain and source to improve thermal and switching performance.

How does the channel type influence circuit design?

The N‑channel enhancement mode requires a positive gate‑to‑source voltage to conduct, so gate‑drive polarity and level should be provided accordingly in the control circuitry.